N-Channel MOSFET. FQD12N06 Datasheet


FQD12N06 MOSFET. Datasheet pdf. Equivalent


Part Number

FQD12N06

Description

60V N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQD12N06 Datasheet


FQD12N06
FQD12N06
60V N-Channel MOSFET
General Description
Product Summary
The FQD12N06combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). Those devices are suitable for use
in PWM, load switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
60V
12A
< 65m
< 85m
TO252
DPAK
Bottom View
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
12
9
30
4
3
19
18
20
10
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
50
4
Max
30
60
7.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W

FQD12N06
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6A
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=2.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
Min
60
1
30
360
40
16
0.6
Typ
2.4
67
85
67
14
0.74
450
61
27
1.4
7.5
3.8
1.2
1.9
4.2
3.4
16
2
27
30
Max Units
V
1
5 µA
100 nA
3V
A
75
100
m
85 m
S
1V
12 A
540 pF
80 pF
40 pF
2.0
10 nC
5 nC
nC
nC
ns
ns
ns
ns
35 ns
nC


Features FQD12N06 60V N-Channel MOSFET General D escription Product Summary The FQD12N 06combine advanced trench MOSFET techno logy with a low resistance package to p rovide extremely low RDS(ON). Those dev ices are suitable for use in PWM, load switching and general purpose applicati ons. VDS ID (at VGS=10V) RDS(ON) (at V GS=10V) RDS(ON) (at VGS = 4.5V) 100% U IS Tested 100% Rg Tested 60V 12A < 65m Ω < 85mΩ TO252 DPAK Bottom View D D G S G S Absolute Maximum Rating s TA=25°C unless otherwise noted Para meter Symbol Drain-Source Voltage VD S Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Contin uous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC= 25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperatur e Range TJ, TSTG Maximum 60 ±20 12 9 30 4 3 19 18 20 10 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Max.
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