FQD4N65 N-Channel MOSFET Datasheet

FQD4N65 Datasheet, PDF, Equivalent


Part Number

FQD4N65

Description

4A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQD4N65 Datasheet


FQD4N65
FQD4N65/FQI4N65/FQU4N65
650V,4A N-Channel MOSFET
General Description
Product Summary
The FQD4N65& FQI4N65 & FQU4N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150
4A
< 2.3
TO252
DPAK
Top View
Bottom View
DD
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
G
S
S
D
G
G
D
S
S
D
G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOU4N60
Maximum
650
±30
4
2.6
14
2.8
118
235
50
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
G
SD G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQD4N65
FQD4N65/FQI4N65/FQU4N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A
gFS Forward Transconductance
VDS=40V, ID=2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
650
670
V
0.67
V/ oC
1
µA
10
±100 nΑ
3.4 4.1 4.5
V
2.1 2.3
6S
0.76 1
V
4A
14 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
420 528 640
35 53 70
2.5 4.8
7
1.2 2.5 3.8
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=4A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
9.5 12 14.5 nC
2.8 3.6 4.5 nC
2.2 4.4 6.6 nC
17 ns
26 ns
34 ns
21 ns
150 190 230
1.9 2.4 3
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10, Starting TJ=25°C
Page 2 of 6


Features FQD4N65/FQI4N65/FQU4N65 650V,4A N-Channe l MOSFET General Description Product Summary The FQD4N65& FQI4N65 & FQU4N65 have been fabricated using an advanced high voltage MOSFET process that is de signed to deliver high levels of perfor mance and robustness in popular AC-DC a pplications.By providing low RDS(on), C iss and Crss along with guaranteed aval anche capability these parts can be ado pted quickly into new and existing offl ine power supply designs. VDS ID (at V GS=10V) RDS(ON) (at VGS=10V) 100% UIS T ested! 100% Rg Tested! 700V@150℃ 4A < 2.3Ω TO252 DPAK Top View Bottom View DD Top View TO251A IPAK Bottom View TO251 Top View Bottom View D S G G S S D G G D S S D G AOD4N60 AOI4N60 Absolute Maximum Ratings TA=2 5°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gat e-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H MOSFE.
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