N-Channel MOSFET. FQPF12N50 Datasheet


FQPF12N50 MOSFET. Datasheet pdf. Equivalent


Part Number

FQPF12N50

Description

12A N-Channel MOSFET

Manufacture

Oucan Semi

Total Page 6 Pages
Datasheet
Download FQPF12N50 Datasheet


FQPF12N50
FQP12N50/FQPF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
The FQP12N50 & FQPF12N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
600V@150
12A
< 0.52
TO 220
TO 220F
Top View
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP12N50/FQB12N50 FQPF12N50
Drain-Source Voltage VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12
8.4
48
5.5
454
908
40
5
12*
8.4*
TC=25°C
Power Dissipation B Derate above 25oC
PD
250
2
50
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP12N50/FQB12N50
65
0.5
FQPF12N50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

FQPF12N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
500
600
0.54
V
V/ oC
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=12A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=12A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
1
10 µA
±100 nΑ
3.3 3.9 4.5
V
0.36 0.52
16 S
0.72 1
V
12 A
48 A
1089
134
10
1.8
1361
167
12.6
3.6
1633
200
15
5.4
pF
pF
pF
30.7 37
7.6 9
13.0 16
29 35
69 83
82 98
55.5 67
231 277
2.82 3.4
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6


Features FQP12N50/FQPF12N50 500V, 12A N-Channel M OSFET General Description Product Sum mary The FQP12N50 & FQPF12N50 have bee n fabricated using an advanced high vol tage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applicatio ns.By providing low RDS(on), Ciss and C rss along with guaranteed avalanche cap ability these parts can be adopted quic kly into new and existing offline power supply designs. VDS ID (at VGS=10V) R DS(ON) (at VGS=10V) 100% UIS Tested 100 % Rg Tested 600V@150℃ 12A < 0.52Ω TO 220 TO 220F Top View D G S Abs olute Maximum Ratings TA=25°C unless o therwise noted Parameter Symbol FQP12 N50/FQB12N50 FQPF12N50 Drain-Source Vo ltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Curr ent TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalan che energy C Single plused avalanche e nergy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 8.4 48 5.5 454 908 4.
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