TB0720M

LITE-ON SEMICONDUCTOR TB0640M thru TB4000M SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Bi-Directional VDRM - 58 to 360 Volts IPP - 80 Amperes FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A @8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams SMB SMB A DIM. MIN. MAX. A 4.06 4.57 B 3.30 3.94 BC C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 G F 0.05 0.20 H FD E G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range THERMAL RESISTANCE SYMBOL IPP ITSM TJ TSTG CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL Rth(J-L) Rth(J-A) △VBR/△TJ MAXIMUM RATED SURGE WAVEFORM IPP, PEAK PULSE CURRENT (%) WAVEFORM 2/10 us 8/20 us 10/160 us 10/560 us 10/700 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K20/K21 GR-1089-CORE IPP (A) 250 250 150 100 90 80 100 50 0 tr VALUE 80 40 -40 to +150 -55 to +150 VALUE 20 100 0.1 UNIT A A ℃ ℃ UNIT ℃/W ℃/W %/℃ Peak value (Ipp) tr= rise time to pea...