PROTECTIVE DEVICE. TB4000M Datasheet


TB4000M DEVICE. Datasheet pdf. Equivalent


Part Number

TB4000M

Description

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Manufacture

LITE-ON

Total Page 5 Pages
Datasheet
Download TB4000M Datasheet


TB4000M
LITE-ON
SEMICONDUCTOR
TB0640M thru TB4000M
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 to 360 Volts
IPP - 80 Amperes
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 80A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.003 ounces, 0.093 grams
SMB
SMB
A DIM. MIN. MAX.
A 4.06 4.57
B 3.30 3.94
BC
C 1.96 2.21
D 0.15 0.31
E 5.21 5.59
G F 0.05 0.20
H FD
E
G 2.01 2.62
H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP
ITSM
TJ
TSTG
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
VBR/TJ
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/560 us
10/700 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K20/K21
GR-1089-CORE
IPP (A)
250
250
150
100
90
80
100
50
0
tr
VALUE
80
40
-40 to +150
-55 to +150
VALUE
20
100
0.1
UNIT
A
A
UNIT
/W
/W
%/
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 5, Oct-2010, KSWB06

TB4000M
ELECTRICAL CHARACTERISTICS @ TA= 25unless otherwise specified
TB0640M thru TB4000M
PARAMETER
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ VDRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ IT=1.0A
BREAKOVER
CURRENT
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
SYMBOL
UNITS
VDRM
Volts
IDRM
uA
VBO
Volts
VT
Volts
IBO
mA
IH Co
mA pF
LIMIT
Max
Max
Max
Max
Min Max
Min Max
Typ
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
TB4000M
58
65
75
90
120
140
170
190
220
275
320
360
5
77
3.5 50 800 150 800
140
5
88
3.5 50 800 150 800
140
5
98
3.5 50 800 150 800
140
5
130
3.5 50 800 150 800
90
5
160
3.5 50 800 150 800
90
5
180
3.5 50 800 150 800
90
5
220
3.5 50 800 150 800
90
5
265
3.5 50 800 150 800
60
5
300
3.5 50 800 150 800
60
5
350
3.5 50 800 150 800
60
5
400
3.5 50 800 150 800
60
5
450
3.5 50 800 150 800
60
SYMBOL
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Note: 1
Off state capacitance
Note: 2
I
IPP
IBO
IH
IBR IDRM
VBR
V
VT
VDRM
VBO
NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.


Features LITE-ON SEMICONDUCTOR TB0640M thru TB40 00M SURFACE MOUNT THYRISTOR SURGE PROT ECTIVE DEVICE Bi-Directional VDRM - 58 to 360 Volts IPP - 80 Amperes FEATURE S Oxide Glass Passivated Junction Bidir ectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A @8/20us High off state Impedan ce and low on state voltage Plastic mat erial has UL flammability classificatio n 94V-0 MECHANICAL DATA Case : Molded p lastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams SMB SMB A DIM. MIN. MAX. A 4.06 4.5 7 B 3.30 3.94 BC C 1.96 2.21 D 0.15 0 .31 E 5.21 5.59 G F 0.05 0.20 H FD E G 2.01 2.62 H 0.76 1.52 All Dimensio ns in millimeter MAXIMUM RATINGS CHAR ACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive pea k On-state current @ 8.3ms (one half cy cle) Junction temperature range storage temperature range THERMAL RESISTANCE SYMBOL IPP ITSM TJ TSTG CHARACTERISTIC S Junction to leads Junction to ambient on print circuit (on re.
Keywords TB4000M, datasheet, pdf, LITE-ON, SURFACE, MOUNT, THYRISTOR, SURGE, PROTECTIVE, DEVICE, B4000M, 4000M, 000M, TB4000, TB400, TB40, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)