TLX9185A PHOTOCOUPLER Datasheet

TLX9185A Datasheet, PDF, Equivalent


Part Number

TLX9185A

Description

PHOTOCOUPLER

Manufacture

TOSHIBA

Total Page 8 Pages
Datasheet
Download TLX9185A Datasheet


TLX9185A
TOSHIBA Photocoupler IRLED & Photo-Transistor
TLX9185A
Various Controllers
Signal transmission between different circuit potential
HEV (Hybrid Electric Vehicle) and
EV (Electric Vehicle) Applications
TLX9185A
Unit: mm
The TOSHIBA TLX9185A mini-flat photocoupler is suitable for surface-
mount assembly. The TLX9185A consists of an infrared LED optically
coupled to a photo-transistor.
This photocoupler can be used to the extensive applications.
It is generic speed transistor output.
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min) to 600%(max)
Rank GB: 100% (min) to 600%(max)
Isolation voltage: 3750 Vrms (min)
AEC-Q101 qualified
Pin Configuration
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
6
4
JEDEC
JEITA
TOSHIBA
11-4M1S
Weight: 0.08 g (typ.)
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-06-28

TLX9185A
TLX9185A
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF 30 mA
Forward current (Ta=125°C)
IF 18 mA
Forward current derating (Ta 108 °C)
ΔIF/°C
-0.7 mA/°C
Pulse forward current
(Note 1)
IFP
1
A
Input Power Dissipation
PD 50 mW
Input Power Dissipation Derating (Ta 50°C)
ΔPD/°C
-0.5 mW/°C
Reverse voltage
VR 5 V
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
7
V
Collector current
IC 50 mA
Collector power dissipation
PC 150 mW
Collector power dissipation derating (Ta 50°C)
ΔPC/°C
-1.5 mW/°C
Operating temperature range
Topr -40 to 125 °C
Storage temperature range
Tstg -55 to 150 °C
Lead soldering temperature (10 s)
Tsol 260 °C
Total package power dissipation
PT 200 mW
Total package power dissipation derating (Ta 50°C)
ΔPT/°C
-2.0 mW/°C
Isolation voltage (AC, 60 s, R.H. 60 %)
(Note 2)
BVS
3750
Vrms
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width PW 100 μs, f = 100 Hz
Note 2: This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6
are shorted together.
Recommended Operating Conditions (Note)
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
VCC
5 48 V
Forward current
IF 10 15 mA
Collector current
IC 1 10 mA
Operating temperature
(Note 1)
Topr
-40 125 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 1: Denotes the operating range, not the recommended operating condition.
© 2019
Toshiba Electronic Devices & Storage Corporation
2
2019-06-28


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