18N20

UNISONIC TECHNOLOGIES CO., LTD 18N20 Preliminary 18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The 18N20 suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 18N20L-TA3-T 18N20G-TA3-T 18N20L-TF3-T 18N20G-TF3-T 18N20L-TN3-R 18N20G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-228.a 18N20  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-228.a 18N20 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS=20kΩ) Gate-Source Voltage VDGR VGSS 200 ±20 V V Continuous Drain Current Pulsed Drain Current (Note 2) ID 18 A IDM 72 A Single Pulse Avalanche Energy Rating (Note 2) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 200 m...