UM6K31N MOSFET TRANSISTOR Datasheet

UM6K31N Datasheet, PDF, Equivalent


Part Number

UM6K31N

Description

SILICON N-CHANNEL MOSFET TRANSISTOR

Manufacture

UTC

Total Page 4 Pages
Datasheet
Download UM6K31N Datasheet


UM6K31N
UNISONIC TECHNOLOGIES CO., LTD
UM6K31N
SILICON N-CHANNEL MOSFET
TRANSISTOR
DESCRIPTION
The UTC UM6K31N is a silicon N-channel MOS Field Effect
Transistor. It can be used in switching applications.
SYMBOL
65
4
Power MOSFET
12
3
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UM6K31NL-AL6-R
UM6K31NG-AL6-R
SOT-363
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123456
Packing
S1 G1 D2 S2 G2 D1 Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-503.B

UM6K31N
UM6K31N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, it is the same rating for the Tr1 AND Tr2)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
±20
V
V
Drain Current Continuous
Continuous
Pulsed (Note1)
ID
IDP
±250
±1
mA
A
Source Current
Continuous (Body Diode)
Continuous
Pulsed (Note1)
IS
ISP
125 mA
1A
Power Dissipation
Channel Temperature
PD 150 mW
TCH 150 °C
Strage Temperature
TSTG
-55~150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Channel to Ambient
SYMBOL
θJA
RATINGS
833
ELECTRICAL CHARACTERISTICS (Ta =25°C, it is the same rating for the Tr1 And Tr2)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS = ±20 V, VDS=0 V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note1)
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=250mA
VGS=4.5V, ID=250mA
VGS=4.0V, ID=250mA
VGS=2.5V, ID=10mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS (Note1)
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=48V, VGS=10V, ID=250mA
IG= 1mA (Note1, 2)
VDS=30V, VGS=10V, ID=250mA,
RG=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note1)
Drain-Source Diode Forward Voltage
VSD IS=250mA, VGS=0V
Note: PW 10μs DUTY CYCLE1%.
MIN TYP MAX UNIT
60 V
1 µA
±10 µA
1.0 2.5
1.7 2.4
2.1 3.0
3.3 4.0
9.4 12
V
26 pF
12 pF
5 pF
6.6 nC
2.48 nC
0.92 nC
6 ns
9 ns
14 ns
12 ns
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-503.B


Features UNISONIC TECHNOLOGIES CO., LTD UM6K31N S ILICON N-CHANNEL MOSFET TRANSISTOR  DESCRIPTION The UTC UM6K31N is a silic on N-channel MOS Field Effect Transisto r. It can be used in switching applicat ions.  SYMBOL 65 4 Power MOSFET 12 3  ORDERING INFORMATION Orderi ng Number Lead Free Halogen Free Pac kage UM6K31NL-AL6-R UM6K31NG-AL6-R S OT-363 Note: Pin Assignment: G: Gate D : Drain S: Source Pin Assignment 12345 6 Packing S1 G1 D2 S2 G2 D1 Tape Reel  MARKING www.unisonic.com.tw Copy right © 2017 Unisonic Technologies Co. , Ltd 1 of 5 QW-R502-503.B UM6K31N P ower MOSFET  ABSOLUTE MAXIMUM RATIN GS (TA=25°C, it is the same rating for the Tr1 AND Tr2) PARAMETER SYMBOL R ATINGS UNIT Drain-Source Voltage Gate -Source Voltage VDSS VGSS 60 ±20 V V Drain Current Continuous Continuous Pulsed (Note1) ID IDP ±250 ±1 mA A Source Current Continuous (Body Dio de) Continuous Pulsed (Note1) IS ISP 125 mA 1A Power Dissipation Channel Temperature PD 150 mW TCH 150 °C Strag.
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