STD1NK60T4

STD1NK60T4 N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power MOSFET in a DPAK package Datasheet - production data Features Order code STD1NK60T4 VDS 600 V RDS(on) max. 8.5 Ω ID PTOT 1 A 30 W Figure 1: Internal schematic diagram D(2, TAB)  Extremely high dv/dt capability  ESD improved capability  100% avalanche tested  Gate charge minimized Applications  Low power battery chargers  Swith mode low power supplies (SMPS)  Low power, ballast, CFL (compact fluorescent lamps) G(1) S(3) Order code STD1NK60T4 AM01475v1_noZen Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Marking Package Packing D1NK60 DPAK Tape and reel February 2017 DocID030307 Rev 1 This is information on a product in full production. 1/19 www.st.com Contents Contents STD1NK60T4 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 9...