STD1NK60T4 N-CHANNEL MOSFET Datasheet

STD1NK60T4 Datasheet, PDF, Equivalent


Part Number

STD1NK60T4

Description

N-CHANNEL MOSFET

Manufacture

STMicroelectronics

Total Page 19 Pages
Datasheet
Download STD1NK60T4 Datasheet


STD1NK60T4
STD1NK60T4
N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD1NK60T4
VDS
600 V
RDS(on) max.
8.5 Ω
ID PTOT
1 A 30 W
Figure 1: Internal schematic diagram
D(2, TAB)
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
Gate charge minimized
Applications
Low power battery chargers
Swith mode low power supplies (SMPS)
Low power, ballast, CFL (compact
fluorescent lamps)
G(1)
S(3)
Order code
STD1NK60T4
AM01475v1_noZen
Description
This high voltage device is an N-channel Power
MOSFET developed using the SuperMESH™
technology by STMicroelectronics, an
optimization of the well-established
PowerMESH™. In addition to a significant
reduction in on-resistance, this device is
designed to ensure a high level of dv/dt capability
for the most demanding applications.
Table 1: Device summary
Marking
Package
Packing
D1NK60
DPAK
Tape and reel
February 2017
DocID030307 Rev 1
This is information on a product in full production.
1/19
www.st.com

STD1NK60T4
Contents
Contents
STD1NK60T4
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 DPAK (TO-252) type A package information................................... 10
4.2 DPAK (TO-252) type C package information .................................. 13
4.3 Packing information......................................................................... 16
5 Revision history ............................................................................ 18
2/19 DocID030307 Rev 1


Features STD1NK60T4 N-channel 600 V, 7.3 Ω typ. , 1 A SuperMESH™ Power MOSFET in a DP AK package Datasheet - production data Features Order code STD1NK60T4 VDS 60 0 V RDS(on) max. 8.5 Ω ID PTOT 1 A 3 0 W Figure 1: Internal schematic diagr am D(2, TAB)  Extremely high dv/dt capability  ESD improved capability  100% avalanche tested  Gate char ge minimized Applications  Low power battery chargers  Swith mode low po wer supplies (SMPS)  Low power, ball ast, CFL (compact fluorescent lamps) G (1) S(3) Order code STD1NK60T4 AM01475 v1_noZen Description This high voltage device is an N-channel Power MOSFET de veloped using the SuperMESH™ technolo gy by STMicroelectronics, an optimizati on of the well-established PowerMESH™ . In addition to a significant reductio n in on-resistance, this device is desi gned to ensure a high level of dv/dt ca pability for the most demanding applica tions. Table 1: Device summary Markin g Package Packing D1NK60 DPAK Tape and reel February 2017 DocID030307 Rev 1 T.
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