STW77N65M5

STW77N65M5 N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET TO-247 Features Order code STW77N65M5 VDSS @Tjmax. 710 V RDS(on) max. < 0.038 Ω ID 69 A ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application Switching applications Description This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code STW77N65M5 Marking 77N65M5 Package TO-247 Packaging Tube February 2011 Doc ID 15322 Rev 3 1/14 www.st.com 14 Contents Contents STW77N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . ...