AP1A003P POWER MOSFET Datasheet

AP1A003P Datasheet, PDF, Equivalent


Part Number

AP1A003P

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 8 Pages
Datasheet
Download AP1A003P Datasheet


AP1A003P
Advanced Power
Electronics Corp.
AP1A003P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
BVDSS
RDS(ON)
ID4
30V
2.1mΩ
120A
Description
AP416A00403sesreierisesaarerefrforomm AAddvvaanncceedd PPoowweerr innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
iTnhdeusTtrOia-l220thrpoaucgkhagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l
rinedsuisstatrniacle athnrdoulogwh phaockleageapcpolsictactioonntsri.butTeheto thloewwotrhldewrmidael
preospisutlanr cpeacaknadgelo. w package cost contribute to the worldwide
popular package.
G
D
S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
ID@TC=25
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4(Silicon Limited)
Drain Current, VGS @ 10V4(Silicon Limited)
Drain Current, VGS @ 10V4
Pulsed Drain Current1
30 V
+20 V
189 A
133 A
120 A
520 A
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
125
2.4
125
-55 to 175
-55 to 175
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
62
Units
/W
/W
1
201609201

AP1A003P
AP1A003P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=5V, ID=40A
VDS=24V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=40A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- - 2.1 m
- - 3 mΩ
1 - 3V
- 195 -
S
- - 10 uA
- - +100 nA
- 83 133 nC
- 17 - nC
- 41 - nC
- 14 - ns
- 70 - ns
- 100 - ns
- 120 - ns
- 7300 11680 pF
- 1320 - pF
- 675 - pF
- 1.5 3 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=40A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 26 - ns
- 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω
4.Package limitation current is 120A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP1A00 3P Halogen-Free Product N-CHANNEL ENHAN CEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ R oHS Compliant & Halogen-Free G D S B VDSS RDS(ON) ID4 30V 2.1mΩ 120A Desc ription AP416A00403sesreierisesaareref rforomm AAddvvaanncceedd PPoowweerr inn ovated design and silicon process techn ology to achieve the lowest possible on -resistance and fast switching performa nce. It provides the designer with an e xtreme efficient device for use in a wi de range of power applications. The TO- 220 package is widely preferred for all commercialiTnhdeusTtrOia-l220thrpoaucg khagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l rined suisstatrniacle athnrdoulogwh phaocklea geapcpolsictactioonntsri.butTeheto thlo ewwotrhldewrmidael preospisutlanr cpeac aknadgelo. w package cost contribute to the worldwide popular package. G D S TO-220(P) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless.
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