AP3N020P POWER MOSFET Datasheet

AP3N020P Datasheet, PDF, Equivalent


Part Number

AP3N020P

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 8 Pages
Datasheet
Download AP3N020P Datasheet


AP3N020P
Advanced Power
Electronics Corp.
AP3N020P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP436N00420sesreierisesaarerefrforommAAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BVDSS
RDS(ON)
ID
30V
20mΩ
23.3A
G
D
S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
30 V
+20 V
23.3 A
14.7 A
80 A
17.8 W
PD@TA=25
EAS
TSTG
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
2
3.2
-55 to 150
W
mJ
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
7
62
Units
/W
/W
1
201608312

AP3N020P
AP3N020P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=15A
VGS=4.5V, ID=10A
VDS=VGS, ID=250uA
VDS=5V, ID=15A
VDS=24V, VGS=0V
VGS= +20V, VDS=0V
ID=10A
VDS=24V
VGS=4.5V
VDS=15V
ID=15A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- - 20 m
- - 30 mΩ
1 - 3V
- 25 -
S
- - 10 uA
- - +100 nA
- 5.5 8.8 nC
- 1.6 - nC
- 2.3 - nC
- 6 - ns
- 42 - ns
- 13 - ns
- 3 - ns
- 520 830 pF
- 90 - pF
- 60 - pF
- 1.1 2.2 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=15A, VGS=0V
IS=15A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 5 - ns
- 1 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP3N02 0P Halogen-Free Product N-CHANNEL ENHAN CEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ R oHS Compliant & Halogen-Free G D S D escription AP436N00420sesreierisesaarer efrforommAAddvvaanncceedd PPoowweerr ii nnnnoovvaatteedd design and silicon pro cess technology to achieve the lowest p ossible on-resistance and fast switchin g performance. It provides the designer with an extreme efficient device for u se in a wide range of power application s. The TO-220 package is widely preferr ed for all commercialindustrial through hole applications. The low thermal res istance and low package cost contribute to the worldwide popular package. BVD SS RDS(ON) ID 30V 20mΩ 23.3A G D S TO-220(P) Absolute Symbol Maximum Ra tingPsa@ramTej=te2r 5oC. (unless other wise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25 Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Cur.
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