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AP4604I

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP4604I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive R...


Advanced Power Electronics

AP4604I

File Download Download AP4604I Datasheet


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Advanced Power Electronics Corp. AP4604I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TTOO-2-2200pCaFcMkagpeaicskawgideelyisprewfeidrerelyd fporeafellrrceodmmfoerrcial-l icnodmumstreiarcl ialt-hinrdousgthrial htohlreougahpphliocaletioanpsp. licTathioens.lowThethemrmoaldl rceosmisptaonucned apnrodvildoews paahcikgahgeisocloastitoncovnotlrtiabguetecatopathbeilitwy oarnlddwliodwe pthoeprumlaarl rpeascisktaagnec.e between the tab and the external heat-sink. BVDSS RDS(ON) ID 40V 2.5mΩ 100A GD S TO-220CFM(I) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS Drain-Source Voltage 40 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range +20 100 73.4 320 50 2.3 80 -55 to 175 V A A A W W mJ ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal R...




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