Si4542DY PowerTrench MOSFET Datasheet

Si4542DY Datasheet, PDF, Equivalent


Part Number

Si4542DY

Description

30V Complementary PowerTrench MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download Si4542DY Datasheet


Si4542DY
Si4542DY
30V Complementary PowerTrenchMOSFET
General Description
Features
This complementary MOSFET device is produced using
ON Semiconductor’s advanced PowerTrench
process that has been especially tailored to
minimize the on-state resistance and yet
maintain low gate charge for superior switching
performance.
Applications
DC/DC converter
Q1: N-Channel
6 A, 30 V
RDS(on) = 28 m@ VGS = 10V
RDS(on) = 35 m@ VGS = 4.5V
Q2: P-Channel
–6 A, –30 V
RDS(on) = 32 m@ VGS = –10V
RDS(on) = 45 m@ VGS = –4.5V
Power management
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4542
Si4542DY
13”
Q1 Q2
30 –30
±20 ±20
6 –6
20 –20
2
1.6
1.2
1
–55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2001 Semiconductor Components Industries, LLC.
October-2017, Rev 1
Publication Order Number:
Si4542DY/D

Si4542DY
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 6 A
VGS = 10 V, ID = 6 A, TJ = 125°C
VGS = 4.5 V, ID = 5 A
VGS = –10 V, ID = –6 A
VGS = –10 V, ID = –6 A, TJ = 125°C
VGS = –4.5 V, ID = –5 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 15 V, ID = 6 A
VDS = –10 V, ID = –6 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Q1
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
Q1 30
Q2 –30
V
Q1 23 mV/°C
Q2 –21
Q1 1 µA
Q2 –1
Q1 +100 nA
Q2 +100
Q1 1 1.5 3 V
Q2 –1 –1.7 –3
Q1 –4 mV/°C
Q2 4
Q1 19 28 m
32 48
25 35
Q2 21 32
29 51
30 45
Q1 20
Q2 –20
A
Q1 18 S
Q2 16
Q1 830 pF
Q2 1540
Q1 185 pF
Q2 400
Q1 80 pF
Q2 170
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDS = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDS = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
VDS = 15 V, ID = 7.5 A, VGS = 5 V
Q2
VDS = –10 V, ID = –6 A, VGS = –5V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6 12
13 24
10 18
22 35
18 29
47 75
5 12
18 30
9 13
15 20
2.8
4
3.1
5
ns
ns
ns
ns
nC
nC
nC
www.onsemi.com
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Features Si4542DY Si4542DY 30V Complementary Po werTrench MOSFET General Descriptio n Features This complementary MOSFET device is produced using ON Semiconduct or’s advanced PowerTrench process tha t has been especially tailored to minim ize the on-state resistance and yet mai ntain low gate charge for superior swit ching performance. Applications • DC/ DC converter • Q1: N-Channel 6 A, 3 0 V RDS(on) = 28 mΩ @ VGS = 10V RDS( on) = 35 mΩ @ VGS = 4.5V • Q2: P-C hannel –6 A, –30 V RDS(on) = 32 m Ω @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V • Power management DD 2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parame ter VDSS VGSS ID PD TJ, TSTG Drain-So urce Voltage Gate-Source Voltage Drai n Current - Continuous - Pulsed Power D issipation for Dual Operation Power Dis sipation for Single Operation (Note 1a ) (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal .
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