FDC608PZ P-Channel MOSFET Datasheet

FDC608PZ Datasheet, PDF, Equivalent


Part Number

FDC608PZ

Description

P-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download FDC608PZ Datasheet


FDC608PZ
FDC608PZ
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using ON Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.
Features
–5.8 A, –20 V.
RDS(ON) = 30 m@ VGS = –4.5 V
RDS(ON) = 43 m@ VGS = –2.5 V
Low Gate Charge
High performance trench technology for extremely
low RDS(ON)
SuperSOT TM –6 package: small footprint (72%
smaller than standard SO–8) low profile (1mm thick).
S
D
D
SuperSOT TM-6
G
D
D
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.608Z
FDC608PZ
7’’
Ratings
–20
±12
–5.8
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2006 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDC608PZ/D

FDC608PZ
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = –250 µA
–20
ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
–0.4
ID = –250 µA,Referenced to 25°C
VGS = –4.5V, ID = –5.8 A
VGS = –2.5V, ID = –5.0 A
VGS = –4.5V,ID = –5.8A,TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –10 V, ID = –5.8 A
–20
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –10 V,
VGS = –4.5 V
ID = –5.8 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
trr
Diode Reverse Recovery Time
IF = –5.8 A, diF/dt = 100A/µs
Qrr
Diode Reverse Recovery Charge
IF = –5.8 A, diF/dt = 100A/µs
–10
–1.0
3
26
38
35
22
1330
270
230
12
13
8
91
60
17
3
6
–0.7
40
15
–1
±10
–1.5
30
43
24
16
145
96
23
–1.3
–1.2
60
23
V
mV/°C
µA
µA
V
mV/°C
m
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
www.onsemi.com
2


Features FDC608PZ FDC608PZ P-Channel 2.5V Specif ied PowerTrench® MOSFET General Descr iption This P-Channel 2.5V specified MO SFET is produced using ON Semiconductor ’s advanced PowerTrench process that has been especially tailored to minimiz e the on-state resistance and yet maint ain low gate charge for superior switch ing performance. These devices are well suited for battery power applications: load switching and power management, b attery power circuits, and DC/DC conver sions. Features • –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V RD S(ON) = 43 mΩ @ VGS = –2.5 V • L ow Gate Charge • High performance tr ench technology for extremely low RDS(O N) • SuperSOT TM –6 package: small footprint (72% smaller than standard SO –8) low profile (1mm thick). S D D SuperSOT TM-6 G D D 16 25 34 Absolut e Maximum Ratings TA=25oC unless otherw ise noted Symbol VDSS VGSS ID PD Para meter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation (Note 1a) (Note 1a).
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