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NTMFS6H800N Dataheets PDF



Part Number NTMFS6H800N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS6H800N DatasheetNTMFS6H800N Datasheet (PDF)

NTMFS6H800N MOSFET – Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C T.

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NTMFS6H800N MOSFET – Power, Single, N-Channel 80 V, 2.1 mW, 203 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 80 ±20 203 143 200 100 28 20 3.8 1.9 900 −55 to + 175 V V A W A W A °C Source Current (Body Diode) IS 166 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 16.1 A) EAS 1271 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.75 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com V(BR)DSS 80 V RDS(ON) MAX 2.1 mW @ 10 V ID MAX 203 A D (5) G (4) S (1,2,3) N−CHANNEL MOSFET 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM D S S 6H800N S AYWZZ G D D D A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 1 1 Publication Order Number: NTMFS6H800N/D NTMFS6H800N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, ID = 250 mA 80 VVDGSS == 800VV, TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V V 39 mV/°C 10 250 mA 100 nA Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) Forward Transconductance gFS CHARGES, CAPACITANCES & GATE RESISTANCE VGS = VDS, ID =.


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