Document
NTMFS6H800N
MOSFET – Power, Single, N-Channel
80 V, 2.1 mW, 203 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
PD
IDM TJ, Tstg
80 ±20 203 143 200 100 28 20 3.8 1.9 900 −55 to + 175
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 166 A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 16.1 A)
EAS 1271 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.75 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS 80 V
RDS(ON) MAX 2.1 mW @ 10 V
ID MAX 203 A
D (5)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
DFN5 (SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
D
S S 6H800N S AYWZZ
G
D
D D
A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
May, 2019 − Rev. 1
1
Publication Order Number: NTMFS6H800N/D
NTMFS6H800N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
V(BR)DSS V(BR)DSS/
TJ IDSS
IGSS
VGS = 0 V, ID = 250 mA
80
VVDGSS == 800VV,
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = 20 V
V 39 mV/°C
10 250 mA 100 nA
Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance
VGS(TH) VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID =.