FDPC5030SG

MOSFET – Dual, N-Channel, Asymmetric, POWERTRENCH), Power Clip, 30 V FDPC5030SG General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel  Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 17 A  Max RDS(on) = 6.5 mW at VGS = 4.5 V, ID = 14 A Q2: N-Channel  Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A  Max RDS(on) = 3.0 mW at VGS = 4.5 V, ID = 22 A  Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.  MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.  RoHS Compliant Applications  Computing  Communications  General Purpose Point of Load Table 1. PIN DESCRIPTION Pin Name 1 HSG 2 GR 3, 4, 9 V+(HSD) 5, 6, 7 SW 8 LSG 10 GND (LSS) Description High Side Gate Gate Return High Side Drain Switching Node, Low Side Drain Low Side Gate Low Side Source DATA SHEET www.onsemi.com ELECTRICAL CONNECTION N-Channel MOSFET PIN1 Top View Bottom View Power Clip 56 (PQFN8 5x6) CASE 483AR PIN ASSIGNMENT HSG GR V+ V+ * GND(LSS) PAD 10 LSG SW SW SW *PAD 9 V+(HSD) MARKING DIAGRAM &Z&3&K FDPC 5030SG &Z &3 &K FDPC5030SG = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING I...