NTR5103N N-Channel MOSFET Datasheet

NTR5103N Datasheet, PDF, Equivalent


Part Number

NTR5103N

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download NTR5103N Datasheet


NTR5103N
NTR5103N
MOSFET – Single,
N-Channel, Small Signal,
SOT-23
60 V, 310 mA
Features
Low RDS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Drain Current (Note 1)
Steady State
VDSS
60
V
VGS ±30
V
TA = 25°C
TA = 85°C
ID
mA
260
190
t<5s
Power Dissipation (Note 1)
Steady State
t<5s
TA = 25°C
TA = 85°C
PD
310
220
mW
300
420
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage
Temperature Range
IDM
TJ, TSTG
1.2
55 to
+150
A
°C
Source Current (Body Diode)
IS 300 mA
Lead Temperature for Soldering Purposes TL 260 °C
(1/8from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
JunctiontoAmbient Steady State
(Note 1)
RqJA
417 °C/W
JunctiontoAmbient t 5 s (Note 1)
RqJA
300
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 W @ 4.5 V
2.5 W @ 10 V
ID MAX
(Note 1)
310 mA
Simplified Schematic
NChannel
3
1
2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
3 Drain
3
1
2
SOT23
CASE 318
STYLE 21
TJ4 MG
G
1
Gate
2
Source
TJ4 = Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTR5103NT1G
Package
SOT23
(PbFree)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2019 Rev. 1
1
Publication Order Number:
NTR5103N/D

NTR5103N
NTR5103N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
60
75
V
mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
IDSS
IGSS
VGS(TH)
VGS(TH)/TJ
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±30 V
VGS = VDS, ID = 250 mA
1 mA
500
200 nA
1.9
4.4
2.6 V
mV/°C
DraintoSource On Resistance
RDS(on)
VGS = 10 V, ID = 240 mA
1.0 2.5
W
VGS = 4.5 V, ID = 50 mA
1.4 3.0
Forward Transconductance
gFS VDS = 5 V, ID = 200 mA
530 mS
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1 MHz,
VDS = 25 V
26.7 40
4.6
2.9
pF
Total Gate Charge
QG(TOT)
0.81 nC
Threshold Gate Charge
GatetoSource Charge
QG(TH)
QGS
VGS =ID5=V2, 4V0DSm=A10 V;
0.31
0.48
GatetoDrain Charge
QGD
0.08
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
TurnOn Delay Time
td(ON)
1.7 ns
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
1.2
4.8
Fall Time
tf
3.6
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 200 mA
TJ = 85°C
0.79 1.2
0.7
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%
3. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2


Features NTR5103N MOSFET – Single, N-Channel, Small Signal, SOT-23 60 V, 310 mA Feat ures • Low RDS(on) • Small Footprin t Surface Mount Package • Trench Tech nology • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Com pliant Applications • Low Side Load S witch • Level Shift Circuits • DC DC Converter • Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIM UM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Unit D rain−to−Source Voltage Gate−to− Source Voltage Drain Current (Note 1) S teady State VDSS 60 V VGS ±30 V TA = 25°C TA = 85°C ID mA 260 190 t<5s Power Dissipation (Note 1) Steady State t<5s TA = 25°C TA = 85°C PD 310 220 mW 300 420 Pulsed Drain Curren t (tp = 10 ms) Operating Junction and S torage Temperature Range IDM TJ, TSTG 1.2 −55 to +150 A °C Source Curre nt (Body Diode) IS 300 mA Lead Temper ature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the.
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