NDS8434

NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. -6.5A, -20V. RDS(ON) = 0.035Ω @ VGS = -4.5V RDS(ON) = 0.05Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) © 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 12017, Rev. 1 NDS8434 -20 -8 -6.5 -20 2.5 1.2 1 -55 to 150 50 25 Units V V A W...