NDS8434 Effect Transistor Datasheet

NDS8434 Datasheet, PDF, Equivalent


Part Number

NDS8434

Description

Single P-Channel Enhancement Mode Field Effect Transistor

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download NDS8434 Datasheet


NDS8434
NDS8434
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-
state resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
-6.5A, -20V. RDS(ON) = 0.035@ VGS = -4.5V
RDS(ON) = 0.05@ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 12017, Rev. 1
NDS8434
-20
-8
-6.5
-20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Publication Order Number:
NDS8434/D

NDS8434
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -4.5 V, ID = -6.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -2.7 V, ID = -5.5 A
VGS = -4.5 V, VDS = -5 V
VGS = -2.7 V, VDS = -5 V
VDS = -10 V, ID = -6.5 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -6 V, ID = -1 A,
VGEN = -4.5 V, RGEN = 6
VDS = -5 V,
ID = -6.5 A, VGS = -4.5 V
Min Typ Max Units
-20
TJ = 55oC
V
-1 µA
-10 µA
100 nA
-100 nA
TJ = 125oC
TJ = 125oC
-0.4 -0.7
-1
-0.3 -0.45 -0.8
0.026 0.035
0.037 0.07
0.036 0.05
-15
-10
18
V
A
S
2330
1070
360
pF
pF
pF
20 40
38 80
169 300
63 120
40 80
5.3
11
ns
ns
ns
ns
nC
nC
nC
www.onsemi.com
2


Features NDS8434 Single P-Channel Enhancement Mod e Field Effect Transistor General Desc ription Features These P-Channel enha ncement mode power field effect transis tors are produced using ON Semiconducto r's proprietary, high cell density, DMO S technology. This very high density pr ocess is especially tailored to minimiz e onstate resistance and provide superi or switching performance. These devices are particularly suited for low voltag e applications such as notebook compute r power management and other battery po wered circuits where fast switching, lo w in-line power loss, and resistance to transients are needed. -6.5A, -20V. R DS(ON) = 0.035Ω @ VGS = -4.5V RDS(ON) = 0.05Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capabil ity in a widely used surface mount pack age. _________________________________ _______________________________________ ___________________ 54 63 72 81 Absol ute Maximum Ratings TA = 25°C unless otherwise noted Symbol Paramet.
Keywords NDS8434, datasheet, pdf, ON Semiconductor, Single, P-Channel, Enhancement, Mode, Field, Effect, Transistor, DS8434, S8434, 8434, NDS843, NDS84, NDS8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)