NDB6020P Effect Transistor Datasheet

NDB6020P Datasheet, PDF, Equivalent


Part Number

NDB6020P

Description

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download NDB6020P Datasheet


NDB6020P
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level P-Channel enhancement mode power field
effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in
the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
-24
A,
-20
V.
RDS(ON)
RDS(ON)
RDS(ON)
=
=
=
000...0007755ΩΩΩ@@@VVGVGSGS==S=-2-4-.27.5.5VV.V. .
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP6020P
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
-20
±8
-24
-70
60
0.4
-65 to 175
NDB6020P
Units
V
V
A
W
W/°C
°C
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
NDP6020P/D

NDB6020P
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
VDS = VGS, ID = -250 µA
RDS(ON) Static Drain-Source On-Resistance
VGS = -4.5 V, ID = -12 A
RDS(ON) Static Drain-Source On-Resistance
RDS(ON) Static Drain-Source On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -2.7 V, ID = -10 A
VGS = -2.5 V, ID = -10 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -12 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -20 V, ID = -3 A,
VGS = -5 V, RGEN = 6
VDS = -10 V,
ID = -24 A, VGS = -5 V
Min Typ Max Units
TJ = 55°C
-20
V
-1 µA
-10 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
-0.4 -0.7
-1
-0.3 -0.56 -0.7
0.041 0.05
0.06 0.08
0.059 0.07
0.064 0.075
-24
14
V
A
S
1590
725
215
pF
pF
pF
15 30
27 60
120 250
70 150
25 35
5
10
nS
nS
nS
nS
nC
nC
nC
www.onsemi.com
2


Features NDP6020P / NDB6020P P-Channel Logic Leve l Enhancement Mode Field Effect Transis tor General Description Features The se logic level P-Channel enhancement mo de power field effect transistors are p roduced using ON Semiconductor's propri etary, high cell density, DMOS technolo gy. This very high density process has been especially tailored to minimize on -state resistance, provide superior swi tching performance, and withstand high energy pulses in the avalanche and comm utation modes. These devices are partic ularly suited for low voltage applicati ons such as automotive, DC/DC converter s, PWM motor controls, and other batter y powered circuits where fast switching , low in-line power loss, and resistanc e to transients are needed. -24 A, - 20 V. RDS(ON) RDS(ON) RDS(ON) = = = 000...0007755ΩΩΩ@@@VVGVGSGS==S=- 2-4-.27.5.5VV.V. . Critical DC electri cal parameters specified at elevated te mperature. Rugged internal source-drai n diode can eliminate the need for an external Zener diode transient .
Keywords NDB6020P, datasheet, pdf, ON Semiconductor, P-Channel, Logic, Level, Enhancement, Mode, Field, Effect, Transistor, DB6020P, B6020P, 6020P, NDB6020, NDB602, NDB60, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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