BS270 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field eff...
BS270 N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
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D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS VDGR VGSS
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
ID Drain Current - Continuous - Pulsed
PD Maximum Power Dissipation Derate Above 25°C
TJ,TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient
© 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 2
G S
BS270 60 60
±20 ±40
400 2000 625
5 -55 to 150
300
200
...