BS270 Effect Transistor Datasheet

BS270 Datasheet, PDF, Equivalent


Part Number

BS270

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download BS270 Datasheet


BS270
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using ON Semiconductor's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
400mA, 60V. RDS(ON) = 2@ VGS = 10V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
________________________________________________________________________________
D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS
VDGR
VGSS
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1M)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
Derate Above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
G
S
BS270
60
60
±20
±40
400
2000
625
5
-55 to 150
300
200
Units
V
V
V
mA
mW
mW/°C
°C
°C
°C/W
Publication Order Number:
BS270/D

BS270
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 10 µA
VDS = 60 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSF Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 500 mA
VDS(ON)
Drain-Source On-Voltage
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, VDS > 2 VDS(on)
VGS = 4.5 V, VDS > 2 VDS(on)
VDS > 2 VDS(on), ID = 200 mA
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
ton Turn-On Time
toff Turn-Off Time
VDD = 30 V, ID = 500 m A,
VGS = 10 V, RGEN = 25
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 400 mA (Note 1)
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Min Typ Max Units
60
TJ = 125oC
V
1 µA
500 µA
10 nA
-10 nA
TJ = 125oC
1
2000
400
100
2.1
1.2
2
1.8
0.6
0.14
2700
600
320
2.5
2
3.5
3
1
0.225
V
V
mA
mS
20 50
pF
11 25 pF
4 5 pF
10 ns
10 ns
400
2000
0.88 1.2
mA
mA
V
www.onsemi.com
2


Features BS270 N-Channel Enhancement Mode Field E ffect Transistor General Description T hese N-Channel enhancement mode field e ffect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These produc ts have been designed to minimize on-st ate resistance while provide rugged, re liable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These product s are particularly suited for low volta ge, low current applications such as sm all servo motor control, power MOSFET g ate drivers, and other switching applic ations. Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell de sign for low RDS(ON). Voltage controlle d small signal switch. Rugged and relia ble. High saturation current capability . ____________________________________ _______________________________________ _____ D Absolute Maximum Ratings Symb ol Parameter TA = 25°C unless otherwi se noted VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage .
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