MTP1N100E Effect Transistor Datasheet

MTP1N100E Datasheet, PDF, Equivalent


Part Number

MTP1N100E

Description

Power Field Effect Transistor

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download MTP1N100E Datasheet


MTP1N100E
MTP1N100E
Designer’sData Sheet
TMOS E−FET.
Power Field Effect
Transistor
HighPerformance SiliconGate CMOS
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced TMOS EFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
1.0 AMPERES, 1000 VOLTS
RDS(on) = 9.0 W
TO220AB
CASE 221A06
Style 5
D
®G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
S
Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage — Continuous
GateSource Voltage — NonRepetitive (tp 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
1000
1000
± 20
± 40
1.0
0.8
3.0
75
0.6
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TJ, Tstg
EAS
RθJC
RθJA
TL
55 to 150
45
1.67
62.5
260
°C
mJ
°C/W
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTP1N100E/D

MTP1N100E
MTP1N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc)
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 500 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min Typ
1000
1.251
2.0 3.0
— 6.0
— 6.7
— 4.86
——
0.9 1.32
— 587
— 59.6
— 12.2
— 9.0
— 12
— 28
— 34
— 14.6
— 2.8
— 6.8
— 5.2
— 0.764
— 0.62
— 655
— 42
— 613
— 0.957
— 3.5
4.5
— 7.5
Max Unit
— Vdc
— mV/°C
μAdc
10
100
100 nAdc
4.0 Vdc
— mV/°C
9.0 Ohm
Vdc
9.0
9.9
— mhos
810 pF
120
25
20 ns
25
55
70
21 nC
Vdc
1.0
— ns
μC
nH
— nH
http://onsemi.com
2


Features MTP1N100E Designer’s™ Data Sheet TM OS E−FET.™ Power Field Effect Trans istor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time . In addition, this advanced TMOS E−F ET is designed to withstand high energy in the avalanche and commutation modes . The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for hig h voltage, high speed switching applica tions in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge cir cuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robu st High Voltage Termination • Avalanc he Energy Specified • Source−to−D rain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and.
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