NVMFS5A140PLZ P-Channel MOSFET Datasheet

NVMFS5A140PLZ Datasheet, PDF, Equivalent


Part Number

NVMFS5A140PLZ

Description

P-Channel MOSFET

Manufacture

On Semiconductor

Total Page 7 Pages
Datasheet
Download NVMFS5A140PLZ Datasheet


NVMFS5A140PLZ
NVMFS5A140PLZ
MOSFET – Power, Single
P-Channel
-40 V, -140 A, 4.2 mW
Features
Small Footprint (5 x 6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical
Inspection
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
www.onsemi.com
VDSS
40 V
RDS(ON) MAX
4.2 mW @ 10 V
7.2 mW @ 4.5 V
ID MAX
140 A
SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise
noted) (Notes 1, 2, 3)
Symbol
Parameter
Value Unit
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain,
C(Nuorrteesnt1R, 3qJ)C,
Steady
State
TC = 25°C
40
±20
140
V
V
A
D (5)
G (4)
1: Source
2: Source
3: Source
4: Gate
5: Drain
S (1,2,3)
P-CHANNEL MOSFET
PD Power Dissipation
RqJC (Note 1)
TC = 25°C
200
ID
Continuous Drain: Steady TA = 25°C
20
C(Nuorrteesnt1R, 2qJ,A3)
State
W
A
DFN5
(SO8FL)
PD Power Dissipation
RqJA (Note 1, 2)
TA = 25°C
3.8
W
IDP Pulsed Drain
Current
PW 10 ms,
duty cycle 1%
560
A
TJ, TSTG Operating Junction and Storage Temperature
55 to
+175
°C
IS Source Current (Body Diode)
EAS Single Pulse Drain to Source Avalanche
Energy (L= 1.0 mH, IL(pk) = 29 A)
TL Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
140
420
A
mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
XXXXXX
A
Y
W
ZZ
MARKING DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
= Specific Device Code
5A140L(NVMFS5A140PLZ)
140LWF(NVMFS5A140PLZWF)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
Value
Unit
RqJC
RqJA
Junction to Case Steady State
Junction to Ambient Steady State (Note 2)
0.75
39 °C/W
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
July, 2019 Rev. 0
1
Publication Order Number:
NVMFS5A140PLZ/D

NVMFS5A140PLZ
NVMFS5A140PLZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
V(BR)DSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID = 1 mA, VGS = 0 V
VDS = 40 V, VGS = 0 V
TJ = 25°C
TJ = 100°C
(Note 4)
40
1.0
100
V
mA
mA
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS (Note 5)
VGS = ±16 V, VDS = 0 V
±10 mA
VGS(th) Gate Threshold Voltage
VDS = 10 V, ID = 1 mA
RDS(on) Drain to Source On Resistance
VGS = 10 V
VGS = 4.5 V
gFS Forward Transconductance
VDS = 10 V, ID = 50 A
CHARGES, CAPACITANCES & GATE RESISTANCE
ID = 50 A
ID = 50 A
1.2 2.6
3.2 4.2
5.0 7.2
125
V
mW
S
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain Charge
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1 MHz
VDS = 20 V,
VGS = 10 V, ID = 50 A
VDS = 20 V,
7400
1030
720
136
26
31
pF
nC
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS = 20 V, ID = 50 A,
VGS = 10 V, RG = 50 W
50
860
540 ns
740
VSD Forward Diode Voltage
VGS = 0 V, IS = 50 A
0.83 1.5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 50 A
di/dt = 100 A/ms
108 ns
236 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 100 °C. Product is not tested to this condition in production.
5. Pulse Test: pulse width 300 ms, duty cycle 2 %.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Features NVMFS5A140PLZ MOSFET – Power, Single P-Channel -40 V, -140 A, 4.2 mW Featur es • Small Footprint (5 x 6 mm) for C ompact Design • Low RDS(on) to Minimi ze Conduction Losses • NVMFS5A140PLZW F: Wettable Flank Option for Enhanced O ptical Inspection • AEC−Q101 Qualif ied and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant w ww.onsemi.com VDSS −40 V RDS(ON) MA X 4.2 mW @ −10 V 7.2 mW @ −4.5 V I D MAX −140 A SPECIFICATION MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) (Notes 1, 2, 3) Symbol Parameter Value Unit VDSS VGS ID Drain to Sour ce Voltage Gate to Source Voltage Con tinuous Drain, C(Nuorrteesnt1R, 3qJ)C, Steady State TC = 25°C −40 ±20 140 V V A D (5) G (4) 1: Source 2: Source 3: Source 4: Gate 5: Drain S ( 1,2,3) P-CHANNEL MOSFET PD Power Dissi pation RqJC (Note 1) TC = 25°C 200 ID Continuous Drain: Steady TA = 25°C −20 C(Nuorrteesnt1R, 2qJ,A3) Stat e W A DFN5 (SO−8FL) PD Power Dissipation RqJA (Note 1, 2) TA = 25°C 3.8 W IDP Pulsed Drain .
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