Document
NVMFS5A140PLZ
MOSFET – Power, Single P-Channel
-40 V, -140 A, 4.2 mW
Features
• Small Footprint (5 x 6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses • NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
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VDSS −40 V
RDS(ON) MAX 4.2 mW @ −10 V 7.2 mW @ −4.5 V
ID MAX −140 A
SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Notes 1, 2, 3)
Symbol
Parameter
Value Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain, C(Nuorrteesnt1R, 3qJ)C,
Steady State
TC = 25°C
−40 ±20 −140
V V A
D (5) G (4)
1: Source 2: Source 3: Source 4: Gate 5: Drain
S (1,2,3) P-CHANNEL MOSFET
PD Power Dissipation RqJC (Note 1)
TC = 25°C
200
ID
Continuous Drain: Steady TA = 25°C
−20
C(Nuorrteesnt1R, 2qJ,A3)
State
W A
DFN5 (SO−8FL)
PD Power Dissipation RqJA (Note 1, 2)
TA = 25°C
3.8
W
IDP Pulsed Drain Current
PW ≤ 10 ms, duty cycle ≤ 1%
−560
A
TJ, TSTG Operating Junction and Storage Temperature
−55 to +175
°C
IS Source Current (Body Diode) EAS Single Pulse Drain to Source Avalanche
Energy (L= 1.0 mH, IL(pk) = −29 A) TL Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
−140 420
A mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol
Parameter
XXXXXX
A Y W ZZ
MARKING DIAGRAM
D S
S XXXXXX S AYWZZ G
D
D D
= Specific Device Code 5A140L(NVMFS5A140PLZ) 140LWF(NVMFS5A140PLZWF)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Value
Unit
RqJC RqJA
Junction to Case Steady State Junction to Ambient Steady State (Note 2)
0.75 39 °C/W
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
July, 2019 − Rev. 0
1
Publication Order Number: NVMFS5A140PLZ/D
NVMFS5A140PLZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
V(BR)DSS IDSS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current
ID = −1 mA, VGS = 0 V VDS = −40 V, VGS = 0 V
TJ = 25°C TJ = 100°C
(Note 4)
−40
−1.0 −100
V mA mA
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS (Note 5)
VGS = ±16 V, VDS = 0 V
±10 mA
VGS(th) Gate Threshold Voltage
VDS = −10 V, ID = −1 mA
RDS(on) Drain to Source On Resistance
VGS = −10 V
VGS = −4.5 V
gFS Forward Transconductance
VDS = −10 V, ID = −50 A
CHARGES, CAPACITANCES & GATE RESISTANCE
ID = −50 A ID = −50 A
−1.2 −2.6 3.2 4.2 5.0 7.2 125
V mW S
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain Charge
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1 MHz VDS = −20 V,
VGS = −10 V, ID = −50 A VDS = −20 V,
7400 1030 720 136
26 31
pF nC
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS = −20 V, ID = −50 A, VGS = −10 V, RG = 50 W
50 860 540 ns 740
VSD Forward Diode Voltage
VGS = 0 V, IS = −50 A
−0.83 −1.5
V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, IS = −50 A di/dt = 100 A/ms
108 ns 236 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 100 °C. Product is not tested to this condition in production. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2 %. 6. Switching characteristics are independent of operating junction temperatures.
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NVMFS5A140PLZ
TYPICAL CHARACTERISTICS
Figure 1. ID − VDS
Figure 2. ID − VGS
Figure 3. RDS(on) − VGS
Figure 4. RDS(on) − TJ
Figure 5. IS − VSD
Figure 6. SW Time − ID
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NVMFS5A140PLZ
TYPICAL CHARACTERISTICS
Figure 7. Ciss, Coss, Crss − VDS
Figure 8. VGS − Qg
Figure 9. SOA
Figure 10. IPEAK − TAV
Figure 11. PD − TC
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NVMFS5A140PLZ
TYPICAL CHARACTERISTICS Figure 12. RqJA − Pulse Time
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NVMFS5A140PLZ
DFN5 5x6, 1.27P (SO−8FL)
CASE 488AA ISSUE M
D 2
D1
.