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NVMFS5A140PLZ Dataheets PDF



Part Number NVMFS5A140PLZ
Manufacturers On Semiconductor
Logo On Semiconductor
Description P-Channel MOSFET
Datasheet NVMFS5A140PLZ DatasheetNVMFS5A140PLZ Datasheet (PDF)

NVMFS5A140PLZ MOSFET – Power, Single P-Channel -40 V, -140 A, 4.2 mW Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant www.onsemi.com VDSS −40 V RDS(ON) MAX 4.2 mW @ −10 V 7.2 mW @ −4.5 V ID MAX −140 A SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Notes 1, 2, .

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NVMFS5A140PLZ MOSFET – Power, Single P-Channel -40 V, -140 A, 4.2 mW Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant www.onsemi.com VDSS −40 V RDS(ON) MAX 4.2 mW @ −10 V 7.2 mW @ −4.5 V ID MAX −140 A SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Parameter Value Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain, C(Nuorrteesnt1R, 3qJ)C, Steady State TC = 25°C −40 ±20 −140 V V A D (5) G (4) 1: Source 2: Source 3: Source 4: Gate 5: Drain S (1,2,3) P-CHANNEL MOSFET PD Power Dissipation RqJC (Note 1) TC = 25°C 200 ID Continuous Drain: Steady TA = 25°C −20 C(Nuorrteesnt1R, 2qJ,A3) State W A DFN5 (SO−8FL) PD Power Dissipation RqJA (Note 1, 2) TA = 25°C 3.8 W IDP Pulsed Drain Current PW ≤ 10 ms, duty cycle ≤ 1% −560 A TJ, TSTG Operating Junction and Storage Temperature −55 to +175 °C IS Source Current (Body Diode) EAS Single Pulse Drain to Source Avalanche Energy (L= 1.0 mH, IL(pk) = −29 A) TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) −140 420 A mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter XXXXXX A Y W ZZ MARKING DIAGRAM D S S XXXXXX S AYWZZ G D D D = Specific Device Code 5A140L(NVMFS5A140PLZ) 140LWF(NVMFS5A140PLZWF) = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Value Unit RqJC RqJA Junction to Case Steady State Junction to Ambient Steady State (Note 2) 0.75 39 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 0 1 Publication Order Number: NVMFS5A140PLZ/D NVMFS5A140PLZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V(BR)DSS IDSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current ID = −1 mA, VGS = 0 V VDS = −40 V, VGS = 0 V TJ = 25°C TJ = 100°C (Note 4) −40 −1.0 −100 V mA mA IGSS Gate to Source Leakage Current ON CHARACTERISTICS (Note 5) VGS = ±16 V, VDS = 0 V ±10 mA VGS(th) Gate Threshold Voltage VDS = −10 V, ID = −1 mA RDS(on) Drain to Source On Resistance VGS = −10 V VGS = −4.5 V gFS Forward Transconductance VDS = −10 V, ID = −50 A CHARGES, CAPACITANCES & GATE RESISTANCE ID = −50 A ID = −50 A −1.2 −2.6 3.2 4.2 5.0 7.2 125 V mW S Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain Charge SWITCHING CHARACTERISTICS (Note 6) VGS = 0 V, f = 1 MHz VDS = −20 V, VGS = −10 V, ID = −50 A VDS = −20 V, 7400 1030 720 136 26 31 pF nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS VDS = −20 V, ID = −50 A, VGS = −10 V, RG = 50 W 50 860 540 ns 740 VSD Forward Diode Voltage VGS = 0 V, IS = −50 A −0.83 −1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = −50 A di/dt = 100 A/ms 108 ns 236 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 100 °C. Product is not tested to this condition in production. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2 %. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 1. ID − VDS Figure 2. ID − VGS Figure 3. RDS(on) − VGS Figure 4. RDS(on) − TJ Figure 5. IS − VSD Figure 6. SW Time − ID www.onsemi.com 3 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 7. Ciss, Coss, Crss − VDS Figure 8. VGS − Qg Figure 9. SOA Figure 10. IPEAK − TAV Figure 11. PD − TC www.onsemi.com 4 NVMFS5A140PLZ TYPICAL CHARACTERISTICS Figure 12. RqJA − Pulse Time www.onsemi.com 5 NVMFS5A140PLZ DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M D 2 D1 .


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