FDMC8032L N-Channel MOSFET Datasheet

FDMC8032L Datasheet, PDF, Equivalent


Part Number

FDMC8032L

Description

Dual N-Channel MOSFET

Manufacture

On Semiconductor

Total Page 8 Pages
Datasheet
Download FDMC8032L Datasheet


FDMC8032L
FDMC8032L
Dual N-Channel
PowerTrench) MOSFET
40 V, 7 A, 20 mW
General Description
This device includes two 40 V NChannel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for
exceptional thermal performance.
Features
Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A
Low Inductance Packaging Shortens Rise/Fall Times
Lower Switching Losses
100% Rg Tested
This Device is PbFree and is RoHS Compliant
Applications
Battery Protection
Load Switching
Point of Load
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
40 V
VGS Gate to Source Voltage
ID Drain Current
Continuous
Continuous
Pulsed
TC = 25°C
TA = 25°C
(Note 1a)
(Note 4)
±20
20
7
50
V
A
EAS Single Pulse Avalanche Energy
(Note 3)
13 mJ
PD Power Dissipation TC = 25°C
Power Dissipation TA = 25°C
(Note 1a)
TJ, TSTG Operating and Storage Junction Temperature
Range
12
1.9
55 to
+150
W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
G1 G2
S1 S2
S1 S2
S1 S2
Pin 1
Pin 1
G1 S1
S1S1
D1
D2
G2 S2
Power 33
WDFN8 3x3, 0.65P
CASE 511DG
S2S2
MARKING DIAGRAM
$Y&Z&2&K
FDMC
8032L
$Y
&Z
&2
&K
FDMC8032L
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
February, 2019 Rev. 4
1
Publication Order Number:
FDMC8032L/D

FDMC8032L
FDMC8032L
THERMAL CHARACTERISTICS
Rating
Symbol
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
FDMC8032L
FDMC8032L
Power 33
Reel Size
13”
Value
9.7
65
Tape Width
12 mm
Unit
°C/W
Quantity
3000 Units
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
OFF CHARACTERISTICS
BVDSS
DBVDSS
DTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25°C
VDS = 32 V, VGS = 0 V
IGSS Gate to Source Leakage Current, Forward
ON CHARACTERISTICS
VGS = ±20 V, VDS = 0 V
VGS(th)
DVGS(th)
DTJ
rDS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25°C
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 6 A
VGS = 10 V, ID = 7 A, TJ = 125°C
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg(TOT)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
VDD = 5 V, ID = 7 A
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDDV=G2S0=V1, 0IDV=, 7 A
RGEN = 6 W
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 20 V
ID = 7 A
Min.
40
1.0
0.1
Typ.
23
1.8
5
16
21
23
27
513
137
9.3
2.6
5.5
1.2
13
1.3
7.6
3.6
1.5
1.0
Max. Unit
V
mV/°C
1 μA
100 nA
3.0 V
mV/°C
20 mW
27
29
S
720 pF
195 pF
15 pF
3.6 W
11 ns
10 ns
24 ns
10 ns
11 nC
5.1 nC
nC
nC
www.onsemi.com
2


Features FDMC8032L Dual N-Channel PowerTrench) MO SFET 40 V, 7 A, 20 mW General Descript ion This device includes two 40 V N−C hannel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is en hanced for exceptional thermal performa nce. Features • Max rDS(on) = 20 mW a t VGS = 10 V, ID = 7 A • Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A • Lo w Inductance Packaging Shortens Rise/Fa ll Times • Lower Switching Losses • 100% Rg Tested • This Device is Pb Free and is RoHS Compliant Application s • Battery Protection • Load Switc hing • Point of Load MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise no ted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ID Drain Curre nt − Continuous − Continuous − Pu lsed TC = 25°C TA = 25°C (Note 1a) (Note 4) ±20 20 7 50 V A EAS Single Pulse Avalanche Energy (Note 3) 13 m J PD Power Dissipation TC = 25°C Powe r Dissipation TA = 25°C (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range 1.
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