FDMC8032L

MOSFET – Dual N-Channel, POWERTRENCH) 40 V, 7 A, 20 mW FDMC8032L General Description This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested This Device is Pb−Free and is RoHS Compliant Applications Battery Protection Load Switching Point of Load MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current 20 A − Continuous − Continuous TC = 25°C TA = 25°C (Note 1a) 7 − Pulsed (Note 4) 50 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation TC = 25°C Power Dissipation TA = 25°C 12 W (Note 1a) 1.9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com G1 G2 S1 S2 S1 S2 S1 S2 Pin 1 Pin 1 G1 S1 S1 S1 D1 D2 G2 S2 S2 S2 Power 33 WDFN8 3x3, 0.65P CASE 511DG MARKING DIAGRAM $Y&Z&2&K FDMC 8032L $Y &Z &2 &K FDMC8032L = onsemi Logo = Assembly Plant Code = Numeric ...