FDS6685 P-Channel MOSFET Datasheet

FDS6685 Datasheet, PDF, Equivalent


Part Number

FDS6685

Description

P-Channel MOSFET

Manufacture

On Semiconductor

Total Page 5 Pages
Datasheet
Download FDS6685 Datasheet


FDS6685
FDS6685
30V P-Channel PowerTrench® MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of ON
Semiconductor’s advanced PowerTrench process. It
has been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
–8.8 A, –30 V
RDS(ON) = 20 m@ VGS = –10 V
RDS(ON) = 35 m@ VGS = –4.5 V
Low gate charge (17nC typical)
Applications
Fast switching speed
Power management
Load switch
Battery protection
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6685
FDS6685
13’’
©2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 4
54
63
72
81
Ratings
–30
±25
–8.8
–50
2.5
1.2
1
–55 to +175
50
125
25
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
Publication Order Number:
FDS6685 /D

FDS6685
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–30
V
BV DSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
–21 mV/°C
–1 µA
IGSSF
Gate–Body Leakage, Forward
VGS = 25 V, VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –25 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
–1 –1.7 –3
V
ID = –250 µA, Referenced to 25°C
5
mV/°C
VGS = –10 V, ID = –8.8 A
VGS = –4.5 V, ID = –6.7 A
VGS= –10 V, ID = –8.8A, TJ=125°C
15 20 m
22 35
19 32
VGS = –10 V, VDS = –5 V
–25
A
VDS = –5 V,
ID = –8.8 A
24 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
1604
408
202
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = –15 V, ID = –8.8 A,
VGS = –5 V
13 23
13.5 24
42 68
25 40
17 24
5
6
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
–2.1
–0.73 –1.2
A
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
www.onsemi.com
2


Features FDS6685 FDS6685 30V P-Channel PowerTren ch® MOSFET General Description Featu res This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s ad vanced PowerTrench process. It has been optimized for power management applica tions requiring a wide range of gave dr ive voltage ratings (4.5V – 25V). –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) Applications • Fast switch ing speed • Power management • Loa d switch • Battery protection • Hi gh performance trench technology for ex tremely low RDS(ON) • High power and current handling capability DD DD DD D D SO-8 Pin 1SO-8 SS SS SS GG Absolut e Maximum Ratings TA=25oC unless otherw ise noted Symbol VDSS V GSS ID PD Par ameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b ) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ.
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