FDC6333C Power MOSFET Datasheet

FDC6333C Datasheet, PDF, Equivalent


Part Number

FDC6333C

Description

N- & P-Channel Power MOSFET

Manufacture

On Semiconductor

Total Page 8 Pages
Datasheet
Download FDC6333C Datasheet


FDC6333C
FDC6333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
Features
These N & P-Channel MOSFETs are produced using
ON Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Q1 2.5 A, 30V.
RDS(ON) = 95 m@ VGS = 10 V
RDS(ON) = 150 m@ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(ON) = 150 m@ VGS = –10 V
RDS(ON) = 220 m@ VGS = –4.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON).
SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
D2
S1
D1
Q2(P)
43
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
52
61
Q1(N)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.333
FDC6333C
7’’
©2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Q1 Q2
30 –30
±16 ±25
2.5 –2.0
8 –8
0.96
0.9
0.7
–55 to +150
Units
V
V
A
W
°C
130 °C/W
60 °C/W
Tape width
8mm
Quantity
3000 units
Publication Order Number:
FDC6333C/D

FDC6333C
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA Q1
VGS = 0 V, ID = –250 µA Q2
30
–30
V
ID = 250 µA,Ref. to 25°C Q1
ID = –250 µA,Ref. to 25°C Q2
27
–22
mV/°C
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
Q1
Q2
1
–1
µA
VGS = 16 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
Q1
Q2
100
100
nA
VGS = –16 V, VDS = 0 V
VGS = –25 V, VDS = 0 V
Q1
Q2
–100
–100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
Q1 VDS = VGS, ID = 250 µA
1 1.8 3
V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
Q2 VDS = VGS, ID = –250 µA
Q1 ID = 250 µA,Ref. To 25°C
Q2 ID = –250 µA,Ref. to 25°C
–1 –1.8 –3
4 mV/°C
–4
RDS(on)
Static Drain–Source
On–Resistance
Q1 VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2.0 A
VGS = 10 V, ID = 2.5 A,TJ=125°C
73 95 m
90 150
106 148
Q2 VGS = –10 V, ID = –2.0 A
VGS =– 4.5 V, ID = –1.7 A
VGS = 10 V, ID= –2.0 A,TJ=125°C
95 130
142 220
149 216
ID(on)
On–State Drain Current
Q1 VGS = 10 V, VDS = 5 V
Q2 VGS = –10 V, VDS = –5 V
8
–8
A
gFS Forward Transconductance Q1 VDS = 5 V ID = 2.5 A
Q2 VDS = –5 V ID = –2.0A
7S
3
Dynamic Characteristics
Ciss Input Capacitance
Q1
Q2
Coss Output Capacitance
Q1
Q2
Crss Reverse Transfer Capacitance Q1
Q2
VDS=15 V, V GS= 0 V, f=1.0MHz
VDS=–15 V, V GS= 0 V, f=1.0MHz
VDS=15 V, V GS= 0 V, f=1.0MHz
VDS=–15 V, V GS= 0 V, f=1.0MHz
VDS=15 V, V GS= 0 V, f=1.0MHz
VDS=–15 V, V GS= 0 V, f=1.0MHz
282
185
49
56
20
26
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
For Q1:
VDS =15 V,
VGS= 10 V,
I DS= 1 A
RGEN = 6
For Q2:
VDS =–15 V, I DS= –1 A
VGS= –10 V, RGEN = 6
For Q1:
VDS =15 V,
VGS= 10 V,
For Q2:
VDS =–15 V,
VGS= –10 V,
I DS= 2.5 A
RGEN = 6
I DS= –2.0 A
4.5 9
4.5 9
6 12
13 23
19 34
11 20
1.5 3
24
4.7 6.6
4.1 5.7
0.9
0.8
0.6
0.4
ns
ns
ns
ns
nC
nC
nC
www.onsemi.com
2


Features FDC6333C FDC6333C 30V N & P-Channel Po werTrench® MOSFETs General Descriptio n Features These N & P-Channel MOSFET s are produced using ON Semiconductor s advanced PowerTrench process that ha s been especially tailored to minimize on-state resistance and yet maintain su perior switching performance. These dev ices have been designed to offer except ional power dissipation in a very small footprint for applications where the b igger more expensive SO-8 and TSSOP-8 p ackages are impractical. Applications DC/DC converter • Load switch • LCD display inverter • Q1 2.5 A, 30V . RDS(ON) = 95 mΩ @ VGS = 10 V RDS(O N) = 150 mΩ @ VGS = 4.5 V • Q2 – 2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = – 4.5 V • Low gate charge • High pe rformance trench technology for extreme ly low RDS(ON). • SuperSOT –6 packa ge: small footprint (72% smaller than S O-8); low profile (1mm thick). D2 S1 D 1 Q2(P) 43 SuperSOT TM-6 Pin 1 G2 S2 G1 SuperSOT™-6 52 61 Q1(N) Absolute Maximum Ratings TA=.
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