FDD8896-F085 N-Channel MOSFET Datasheet

FDD8896-F085 Datasheet, PDF, Equivalent


Part Number

FDD8896-F085

Description

N-Channel MOSFET

Manufacture

On Semiconductor

Total Page 11 Pages
Datasheet
Download FDD8896-F085 Datasheet


FDD8896-F085
FDD8896-F085
N-Channel PowerTrench® MOSFET
30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
D
G
S
Ratings
30
±20
94
85
17
Figure 4
168
80
0.53
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.88
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2012 Semiconductor Components Industries, LLC.
September2017, Rev. 3
Publication Order Number:
FDD8896-F085/D

FDD8896-F085
Package Marking and Ordering Information
Device Marking
FDD8896
Device
FDD8896-F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID = 35A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 35A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 15V, ID = 35A
VGS = 10V, RGS = 6.2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25°C, L = 0.43mH, IAS = 28A, VDD = 27V, VGS = 10V.
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/μs
ISD = 35A, dISD/dt = 100A/μs
Min Typ Max Units
30 - - V
- -1
μA
- - 250
- - ±100 nA
1.2 - 2.5
- 0.0047 0.0057
- 0.0057 0.0068
- 0.0075 0.0092
V
Ω
- 2525 -
pF
- 490 -
pF
- 300 -
pF
- 2.1 -
Ω
- 46 60 nC
- 24 32 nC
- 2.3 3.0 nC
- 6.9 - nC
- 4.6 - nC
- 9.8 - nC
- - 171 ns
- 9 - ns
- 106 -
ns
- 53 - ns
- 41 - ns
- - 143 ns
- - 1.25 V
- - 1.0 V
- - 27 ns
- - 12 nC
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Features FDD8896-F085 N-Channel PowerTrench® MOS FET FDD8896-F085 N-Channel PowerTrench ® MOSFET 30V, 94A, 5.7mΩ General Desc ription This N-Channel MOSFET has been designed specifically to improve the ov erall efficiency of DC/DC converters us ing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS( ON) and fast switching speed. Applicati ons • DC/DC converters Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 3 5A • High performance trench technolo gy for extremely low rDS(ON) • Low ga te charge • High power and current ha ndling capability • Qualified to AEC Q101 • RoHS Compliant D G S DTO-P-2 A5K2 (TO-252) MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbo l VDSS VGS ID EAS PD Parameter Drain t o Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, V GS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulse.
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