EFC4C002NL Power MOSFET Datasheet

EFC4C002NL Datasheet, PDF, Equivalent


Part Number

EFC4C002NL

Description

Power MOSFET

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download EFC4C002NL Datasheet


EFC4C002NL
EFC4C002NL
Power MOSFET
for 3-Cells Lithium-ion Battery Protection
30V, 2.6m, 30A, Dual N-Channel, WLCSP8
This N-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and ultra low on resistance.
This device is suitable for applications of DRONE or NOTEBOOK PC.
Features
Ultra Low On-Resistance
Low Gate Charge
Common-Drain type
Pb-Free, Halogen Free and RoHS compliance
Applications
3-Cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
VSSS
VGSS
30 V
20 V
Source Current (DC)
Source Current (Pulse)
PW10s, duty cycle1%
Total Dissipation (Note 2)
IS 30 A
ISP 120 A
PT 2.6 W
Junction Temperature
Tj 150 C
Storage Temperature
Tstg 55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 2)
RJA
Note 2 : Surface mounted on ceramic substrate(5000mm2 0.8mm).
48
Unit
C/W
www.onsemi.com
VSSS
30V
RSS(on) Max
2.6m@ 10V
3.3m@ 8V
5.1m@ 4.5V
IS Max
30A
ELECTRICAL CONNECTION
N-Channel
6, 8 7
4, 5
1. Source 1
2. Gate 1
3. Source 1
4. Drain
5. Drain
6. Source 2
7. Gate 2
1, 3 2 8. Source 2
PIN ASSIGNMENT
Pin1:S1
Pin3:S1
Pin2:G1
Pin4:D
Pin8:S2
Pin6:S2
Pin7:G2
BOTTOM VIEW
Pin5:D
MARKING DIAGRAM
4C2
AAYWWZ
4C2 = Specific Device Code
AA = Assembly Location
Y = Year
WW = Work Week
Z = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
April 2016 - Rev. 0
1
Publication Order Number :
EFC4C002NL/D

EFC4C002NL
EFC4C002NL
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)
IS=1mA, VGS=0V
VSS=24V, VGS=0V
VGS=20V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=10A
VGS=10V, IS=10A
VGS=8V, IS=10A
VGS=4.5V, IS=10A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
30 V
1 A
200 nA
1.3 2.2 V
16 S
1.5 2.0 2.6 m
1.6 2.1 3.3 m
2.2 2.9 5.1 m
Static Drain to Source On-State
Resistance
RDS(on)
VGS=10V, IS=1A
10 m
Gate Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
RG
td(on)
tr
td(off)
tf
VSS=15V, VGS=10V, IS=10A Test Circuit 6
3
40 ns
750 ns
280 ns
105 ns
Input Capacitance
Ciss
VSS=15V, VGS=0V, f=1MHz
6,200
pF
Total Gate Charge
Qg VSS=15V, VGS=4.5V, IS=15A Test Circuit 7
45 nC
Forward Source to Source Voltage
VF(S-S)
IS=10A, VGS=0V
Test Circuit 8
0.75 1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Features EFC4C002NL Power MOSFET for 3-Cells Lith ium-ion Battery Protection 30V, 2.6mΩ , 30A, Dual N-Channel, WLCSP8 This N-C hannel Power MOSFET is produced using O N Semiconductor’s trench technology, which is specifically designed to minim ize gate charge and ultra low on resist ance. This device is suitable for appli cations of DRONE or NOTEBOOK PC. Featur es  Ultra Low On-Resistance  Low Gate Charge  Common-Drain type  P b-Free, Halogen Free and RoHS complianc e Applications  3-Cells Lithium-ion Battery Charging and Discharging Switc h SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1, 2) Par ameter Symbol Value Unit Source to Source Voltage Gate to Source Voltage VSSS VGSS 30 V 20 V Source Current (DC) Source Current (Pulse) PW10 s, duty cycle1% Total Dissipation (N ote 2) IS 30 A ISP 120 A PT 2.6 W Jun ction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. I.
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