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NSR2030QMUTWG

ON Semiconductor

2A 30V Schottky Full Bridge

NSR2030QMUTWG M 2A, 30V Schottky Full Bridge These full bridge Schottky barrier diodes are designed for the rectificat...



NSR2030QMUTWG

ON Semiconductor


Octopart Stock #: O-1425789

Findchips Stock #: 1425789-F

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Description
NSR2030QMUTWG M 2A, 30V Schottky Full Bridge These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications. Features Extremely Fast Switching Speed Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A These Devices are Pb−Free, Halogen Free and are RoHS Compliant Typical Applications Low Voltage Full Bridge Rectification & Wireless Charging MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Reverse Voltage Forward Current (DC) Forward Current Surge Peak (60 Hz, 1 cycle) VR IF IFSM 30 2.0 12.5 V A A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM 40 10 3.0 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 2) 2.08 20.8 W mW/°C Thermal Resistance Junction to Ambient RqJA (Note 2) 48 °C/W Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 3) 0.75 7.6 W...




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