NSR2030QMUTWG Full Bridge Datasheet

NSR2030QMUTWG Datasheet, PDF, Equivalent


Part Number

NSR2030QMUTWG

Description

2A 30V Schottky Full Bridge

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download NSR2030QMUTWG Datasheet


NSR2030QMUTWG
NSR2030QMUTWG
2A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR2030QMUTWG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package
that is ideal for space constrained wireless applications.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Current Surge Peak
(60 Hz, 1 cycle)
VR
IF
IFSM
30
2.0
12.5
V
A
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t=1s
IFSM
40
10
3.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board
TA = 25°C
Derate above 25°C
PD
(Note 2)
2.08
20.8
W
mW/°C
Thermal Resistance Junction to Ambient RqJA
(Note 2)
48
°C/W
Total Device Dissipation FR-5 Board
TA = 25°C
Derate above 25°C
PD
(Note 3)
0.75
7.6
W
mW/°C
Thermal Resistance Junction to Ambient RqJA
(Note 3)
132
°C/W
Total Device Dissipation FR-5 Board
TA = 25°C
Derate above 25°C
PD
(Note 4)
0.87
8.8
W
mW/°C
Thermal Resistance Junction to Ambient RqJA
(Note 4)
114
°C/W
Junction Temperature
Storage Temperature Range
TJ
+125
°C
Tstg −55 to °C
+150
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm2, 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air.
www.onsemi.com
UDFN4 3.5x3.5
CASE 517DA
MARKING
DIAGRAM
1
2030
AYWWG
G
2030 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
DEVICE SCHEMATIC
ORDERING INFORMATION
Device
Package Shipping
NSR2030QMUTWG UDFN4 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2017 − Rev. 1
Publication Order Number:
NSR2030QMU/D

NSR2030QMUTWG
NSR2030QMUTWG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 1.0 mA)
Reverse Leakage (VR = 30 V)
Forward Voltage (IF = 0.5 A)
Forward Voltage (IF = 1.0 A)
Forward Voltage (IF = 2.0 A)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA)
V(BR)
IR
VF
VF
VF
trr
30 − − V
− 5.0 20 mA
0.41 0.455
V
− 0.46 0.55 V
− 0.54 0.65 V
− 34 − ns
Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz)
CT
− 102 −
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. All specifications pertain to a single diode.
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Features NSR2030QMUTWG M 2A, 30V Schottky Full Bridge These full bridge Schottky barri er diodes are designed for the rectific ation of the high speed signal of wirel ess charging. The NSR2030QMUTWG has a v ery low forward voltage that will reduc e conduction loss. It is housed in a UD FN 3.5 x 3.5 x 0.5 mm package that is i deal for space constrained wireless app lications. Features • Extremely Fast Switching Speed • Low Forward Voltag e − 0.54 V (Typ) @ IF = 2 A • These Devices are Pb−Free, Halogen Free an d are RoHS Compliant Typical Applicati ons • Low Voltage Full Bridge Rectifi cation & Wireless Charging MAXIMUM RAT INGS (TJ = 125°C unless otherwise note d) (Note 1) Rating Symbol Value Unit Reverse Voltage Forward Current (DC) F orward Current Surge Peak (60 Hz, 1 cyc le) VR IF IFSM 30 2.0 12.5 V A A No n−Repetitive Peak Forward Current (Sq uare Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM 40 10 3.0 A Stresses exceeding those listed in the Maximum Ratings table may damage the.
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