DatasheetsPDF.com

SBRD81045T4G

ON Semiconductor

Schottky Power Rectifier

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G This series of Power Re...


ON Semiconductor

SBRD81045T4G

File Download Download SBRD81045T4G Datasheet


Description
Schottky Power Rectifier, Switch-Mode, 10 A, 45 V MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 1.7 grams for D2PAK (approximately) 0.4 grams for DPAK (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) www.onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS 1 4 3 MARKING DIAGRAM 4 1 3 D2PAK−3 CASE 418B AY WW MBRB1045G AKA A = Assembly Location Y = Year WW = Work...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)