MBRS2040LT3G Power Rectifier Datasheet

MBRS2040LT3G Datasheet, PDF, Equivalent


Part Number

MBRS2040LT3G

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download MBRS2040LT3G Datasheet


MBRS2040LT3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
MBRS2040LT3G,
NRVBS2040LT3G,
NRVBS2040LN
. . . employing the Schottky Barrier principle in a metaltosilicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for OverVoltage Protection
Low Forward Voltage Drop
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These are PbFree Devices
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 95 mg (approximately)
Maximum Temperature of 260°C / 10 Seconds for Soldering
Cathode Polarity Band
Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3”
Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Marking: BKJL
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
40 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
BKJLG
G
BKJL
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
MBRS2040LT3G
Package
SMB
(PbFree)
Shipping
2,500 /
Tape & Reel
NRVBS2040LT3G*
NRVBS2040LNT3G*
SMB
(PbFree)
SMB
(PbFree)
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2019 Rev. 6
1
Publication Order Number:
MBRS2040LT3/D

MBRS2040LT3G
MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 103°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 104°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
40
2.0
4.0
70
V
A
A
A
Storage Temperature
Tstg, TC
55 to +150
°C
Operating Junction Temperature
TJ 55 to +125 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — JunctiontoLead (Note 1)
Thermal Resistance — JunctiontoAmbient (Note 2)
1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
RRθθJJAL
Value
22.5
78
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(IF = 2.0 A)
(IF = 4.0 A)
VF
TJ = 25°C
TJ = 125°C
Volts
0.43 0.34
0.50 0.45
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR = 40 V)
(VR = 20 V)
IR
TJ = 25°C
TJ = 100°C
mA
0.8 20
0.1 6.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.
www.onsemi.com
2


Features Surface Mount Schottky Power Rectifier S MB Power Surface Mount Package MBRS204 0LT3G, NRVBS2040LT3G, NRVBS2040LN . . . employing the Schottky Barrier princip le in a metal−to−silicon power rect ifier. Features epitaxial construction with oxide passivation and metal overla y contact. Ideally suited for low volta ge, high frequency switching power supp lies; free wheeling diodes and polarity protection diodes. Features • Compac t Package with J−Bend Leads Ideal for Automated Handling • Highly Stable O xide Passivated Junction • Guardring for Over−Voltage Protection • Low F orward Voltage Drop • ESD Ratings: Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) • NRVB P refix for Automotive and Other Applicat ions Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualifi ed and PPAP Capable* • These are Pb Free Devices Mechanical Characteristic s • Case: Molded Epoxy • Epoxy Meet s UL94, VO at 1/8″ • Weight: 95 mg (approximately) • Maximum Temperature of 260°C / 10 Seconds fo.
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