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SBRS8130LN Dataheets PDF



Part Number SBRS8130LN
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Power Rectifier
Datasheet SBRS8130LN DatasheetSBRS8130LN Datasheet (PDF)

Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. F.

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Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) • Small Compact Surface Mountable Package with J−Bend Leads • Highly Stable Oxide Passivated Junction • Guard−Ring for Stress Protection • ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) • SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These are Pb−Free Devices Mechanical Characteristics • Case: Epoxy, Molded • Weight: 100 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Cathode Polarity Band www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW 1BL3G G 1BL3 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRS130LT3G SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LT3G* SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LT3G−VF01* SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LNT3G* SMB 2,500 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2019 − Rev. 11 1 Publication Order Number: MBRS130LT3/D MBRS130LT3G, SBRS8130LT3G, SBRS8130LN MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TL = 120°C TL = 110°C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IF(AV) IFSM 30 1.0 2.0 40 V A A Operating Junction Temperature TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper) Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper) Symbol YJL RqJA Value 12 228.8 71.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 25°C) VF 0.395 0.445 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR mA 1.0 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. 10 10 TJ = 100°C 1 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage 0.7 1 TJ = 100°C 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage IF, INSTANTANEOUS FORWARD CURRENT (A) IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) www.onsemi.com 2 IR, IREVERSE CURRENT (mA) IF(AV), AVERAGE FORWARD CURRENT (A) MBRS130LT3G, SBRS8130LT3G, SBRS8130LN IR, IREVERSE CURRENT (mA) 100 10 1.0 TJ = 100°C 0.1 25°C 0.01 0.001 0 3 6 9 12 15 18 21 24 27 30 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Leakage Current 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 0 3 6 9 12 15 18 21 24 27 30 VR, REVERSE VOLTAGE (V) Figure 4. Typical Maximum Reverse Leakage Curent 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 100 DC SQUARE WAVE 105 110 115 120 125 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating (Case) 130 PF(AV), AVERAGE POWER DISSIPATION (W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 SQUARE DC 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Typical Power Dissipation C, CAPACITAN.


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