MBR2H200SF Power Rectifier Datasheet

MBR2H200SF Datasheet, PDF, Equivalent


Part Number

MBR2H200SF

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download MBR2H200SF Datasheet


MBR2H200SF
MBR2H200SF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
Features
Guardring for Stress Protection
Low Forward Voltage
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
These are Pb−Free Devices
Mechanical Characteristics
Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2J
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
200 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L2JMG
G
L2J = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR2H200SFT1G
MBR2H200SFT3G
Package
Shipping
SOD−123 3000 / Tape &
(Pb−Free)
Reel
SOD−123 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 1
1
Publication Order Number:
MBR2H200SF/D

MBR2H200SF
MBR2H200SF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 V
Average Rectified Forward Current
(TL = 108°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 105°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFRM
IFSM
2.0 A
4.0 A
30 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
23 °C/W
85 °C/W
330 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF V
0.86
0.94
0.71
0.78
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
200 mA
2 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Features MBR2H200SF Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package This device uses the Schottky Barrier principle with a large area metal−to silicon power diode. Ideally suited f or low voltage, high frequency rectific ation or as free wheeling and polarity protection diodes in surface mount appl ications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products s uch as cellular and cordless phones, ch argers, notebook computers, printers, P DAs and PCMCIA cards. Typical applicati ons are AC−DC and DC−DC converters, reverse battery protection, and “Ori ng” of multiple supply voltages and a ny other application where performance and size are critical. Features • Gua rdring for Stress Protection • Low Fo rward Voltage • Epoxy Meets UL 94 V 0 • Package Designed for Optimal Aut omated Board Assembly • These are Pb Free Devices Mechanical Characteristics • Reel Options: MBR2H200SFT3G = 10,000 per 13 in .
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