SBRA8160NT3G Power Rectifier Datasheet

SBRA8160NT3G Datasheet, PDF, Equivalent


Part Number

SBRA8160NT3G

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download SBRA8160NT3G Datasheet


SBRA8160NT3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
SS16T3G,
SBRA8160T3G,
SBRA8160NT3G
These devices employ the Schottky Barrier principle in a large area
metaltosilicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
SBRA8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
60 VOLTS
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
SS16
AYWWG
SS16
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Device
SS16T3G
SBRA8160T3G*
Package
SMA
(PbFree)
SMA
(PbFree)
Shipping
5,000 /
Tape & Reel
5,000 /
Tape & Reel
SBRA8160NT3G*
SMA
(PbFree)
5,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2019 Rev. 9
1
Publication Order Number:
SS16/D

SBRA8160NT3G
SS16T3G, SBRA8160T3G, SBRA8160NT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
60
1.0
40
V
A
A
Storage/Operating Case Temperature
Tstg, TC
55 to +150
°C
Operating Junction Temperature
TJ 55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4.
Symbol
RqJL
RqJA
Value
35
86
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
((IIFF
=
=
0.1
1.0
A)
A)
VF TJ = 25°C
0.51
0.72
V
Maximum Instantaneous Reverse Current
(VR = 60 V)
IR
TJ = 25°C
TJ = 100°C
mA
0.2 5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Features Surface Mount Schottky Power Rectifier S MA Power Surface Mount Package SS16T3G , SBRA8160T3G, SBRA8160NT3G These devic es employ the Schottky Barrier principl e in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with ox ide passivation and metal overlay conta ct. Ideally suited for low voltage, hig h frequency rectification, or as free w heeling and polarity diodes in surface mount applications where compact size a nd weight are critical to the system. F eatures • Small Compact Surface Mount able Package with J−Bent Leads • Re ctangular Package for Automated Handlin g • Highly Stable Oxide Passivated Ju nction • Very Low Forward Voltage Dro p • Guardring for Stress Protection SBRA8 Prefix for Automotive and Othe r Applications Requiring Unique Site an d Control Change Requirements; AEC−Q1 01 Qualified and PPAP Capable* • Thes e Devices are Pb−Free, Halogen Free/B FR Free and are RoHS Compliant Mechanical Characteristics • Case: Epoxy, Molded, Epoxy .
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