MBRM110LT1G Power Rectifier Datasheet

MBRM110LT1G Datasheet, PDF, Equivalent


Part Number

MBRM110LT1G

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download MBRM110LT1G Datasheet


MBRM110LT1G
MBRM110LT1G,
NRVBM110LT1G,
NRVBM110LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Ultra Low VF
1st in Marketplace with a 10 VR Schottky Rectifier
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics:
POWERMITEis JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 62 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 2
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
M
1L1G
2
M = Date Code
1L1 = Device Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM110LT1G
POWERMITE
3,000 /
(PbFree) Tape & Reel
NRVBM110LT1G POWERMITE
3,000 /
(PbFree) Tape & Reel
MBRM110LT3G
POWERMITE 12,000 /
(PbFree) Tape & Reel
NRVBM110LT3G POWERMITE 12,000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRM110L/D

MBRM110LT1G
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 115C, RqJL = 35C/W)
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
10
1.0
50
V
A
A
Storage Temperature
Tstg 55 to 125
C
Operating Junction Temperature
TJ 55 to 125 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Anode) (Note 1)
Thermal Resistance, JunctiontoTab (Cathode) (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
Symbol
RRtjttajlb
Rtja
Value
35
23
277
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(VR = 5.0 V)
(VR = 10 V)
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
Symbol
VF
IR
Value
TJ = 25C
0.280
0.365
0.415
TJ = 100C
0.175
0.275
0.325
TJ = 25C
0.2
0.5
TJ = 100C
30
60
Unit
V
mA
10
TJ = 125C
100C
75C
1
25C 55C
10
TJ = 125C
100C
75C
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
25C
55C
0.1 0.2
0.3
0.4 0.5
0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2


Features MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Packa ge The Schottky POWERMITE employs t he Schottky Barrier principle with a ba rrier metal and epitaxial construction that produces optimal forward voltage d rop−reverse current tradeoff. The adv anced packaging techniques provide for a highly efficient micro miniature, spa ce saving surface mount Rectifier. With its unique heatsink design, the POWERM ITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of t he lowest height profiles,  1.1 mm i n the industry. Because of its small si ze, it is ideal for use in portable and battery powered products such as cellu lar and cordless phones, chargers, note book computers, printers, PDAs and PCMC IA cards. Typical applications are AC DC and DC−DC converters, reverse bat tery protection, and “ORing” of mul tiple supply voltages and any other application where performance and size are cr.
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