MBR2045CTG Power Rectifier Datasheet

MBR2045CTG Datasheet, PDF, Equivalent


Part Number

MBR2045CTG

Description

Power Rectifier

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download MBR2045CTG Datasheet


MBR2045CTG
MBR2045CTG,
MBRF2045CTG
Switch-mode
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
1
2, 4
3
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
1
2
3
TO−220
FULLPAK]
CASE 221AH
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 12
1
Publication Order Number:
MBR2045CT/D

MBR2045CTG
MBR2045CTG, MBRF2045CTG
AYWW
MBR2045CTG
AKA
AYWW
B2045G
AKA
TO−220AB
TO−220 FULLPAK
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
Figure 1. Marking Diagrams
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IF(AV)
A
20
10
IFRM 20 A
Non−Repetitive Peak Surge Current
IFSM 150 A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 13
IRRM 1.0 A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR2045CTG)
(MBRF2045CTG)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
Symbol
RqJC
RqJA
RqJC
RqJA
Value
2.0
60
4.75
75
Unit
°C/W
www.onsemi.com
2


Features MBR2045CTG, MBRF2045CTG Switch-mode Powe r Rectifier Features and Benefits • L ow Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacit y • 175°C Operating Junction Tempera ture • 20 A Total (10 A Per Diode Leg ) • These Devices are Pb−Free and a re RoHS Compliant Applications • Powe r Supply − Output Rectification • P ower Management • Instrumentation Mec hanical Characteristics • Case: Epoxy , Molded • Epoxy Meets UL 94, V−0 @ 0.125 in • Weight: 1.9 Grams (Approx imately) • Finish: All External Surfa ces Corrosion Resistant and Terminal Le ads are Readily Solderable • Lead Tem perature for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Hu man Body Model = 3B Machine Model = C www.onsemi.com SCHOTTKY BARRIER RECTIFI ER 20 AMPERES, 45 VOLTS 1 2, 4 3 4 1 2 3 TO−220AB CASE 221A STYLE 6 1 2 3 TO−220 FULLPAK] CASE 221AH DEVICE MA RKING INFORMATION See general marking i nformation in the device marking section on page 2 of this data sheet. ORDERING INFORMATION See detailed .
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