NRVBS130T3G Power Rectifier Datasheet

NRVBS130T3G Datasheet, PDF, Equivalent


Part Number

NRVBS130T3G

Description

Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download NRVBS130T3G Datasheet


NRVBS130T3G
Surface Mount
Schottky Power Rectifier
MBRS130T3G,
NRVBS130T3G,
NRVBS130N
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These are PbFree Devices
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B13G
G
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
MBRS130T3G
Package
SMB
(PbFree)
Shipping
2500 /
Tape & Reel
NRVBS130T3G*
SMB
(PbFree)
2500 /
Tape & Reel
NRVBS130NT3G*
SMB
(PbFree)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2019 Rev. 10
1
Publication Order Number:
MBRS130T3/D

NRVBS130T3G
MBRS130T3G, NRVBS130T3G, NRVBS130N
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 115°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
30
1.0
40
V
A
A
Operating Junction Temperature
TJ 65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, JunctiontoLead
(TL = 25°C)
Symbol
RqJL
Value
12
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
VF 0.6 V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR mA
1.0
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Features Surface Mount Schottky Power Rectifier MBRS130T3G, NRVBS130T3G, NRVBS130N This device employs the Schottky Barrier pr inciple in a large area metal−to−si licon power diode. State−of−the−a rt geometry features epitaxial construc tion with oxide passivation and metal o verlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protec tion diodes in surface mount applicatio ns where compact size and weight are cr itical to the system. Features • Smal l Compact Surface Mountable Package wit h J−Bend Leads • Rectangular Packag e for Automated Handling • Highly Sta ble Oxide Passivated Junction • Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C) • Excellent Abi lity to Withstand Reverse Avalanche Ene rgy Transients • Guardring for Stress Protection • NRVB Prefix for Automot ive and Other Applications Requiring Un ique Site and Control Change Requiremen ts; AEC−Q101 Qualified and PPAP Capable* • These are Pb−Free Devices Mechanical Characteri.
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