SZNUP1105LT1G Protection Diode Datasheet

SZNUP1105LT1G Datasheet, PDF, Equivalent


Part Number

SZNUP1105LT1G

Description

ESD Protection Diode

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download SZNUP1105LT1G Datasheet


SZNUP1105LT1G
NUP1105LT1G,
SZNUP1105LT1G
ESD Protection Diode
Single Line CAN/LIN Bus Protector
The NUP1105L has been designed to protect LIN and single line
CAN transceivers from ESD and other harmful transient voltage
events. This device provides bidirectional protection for the data line
with a single SOT23 package, giving the system designer a low cost
option for improving system reliability and meeting stringent EMI
requirements.
www.onsemi.com
SOT23 BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
Features
SOT23 Package Allows One Separate Bidirectional Configuration
350 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Low Reverse Leakage Current (< 100 nA)
IEC Compatibility: IEC 6100042 (ESD): Level 4
IEC 6100044 (EFT): 40 A – 5/50 ns
IEC 6100045 (Lighting) 8.0 A (8/20 ms)
ISO 76371, Nonrepetitive EMI Surge Pulse TBD
ISO 76373, Repetitive Electrical Fast Transient (EFT) TBD
EMI Surge Pulses
Flammability Rating UL 94 V0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Automotive Electronics
LIN Bus
Single Line CAN
Industrial Control Networks
Smart Distribution Systems (SDS®)
DeviceNet
SOT23
CASE 318
STYLE 27
1 PIN 1. ANODE
3 2. ANODE
2 3. CATHODE
MARKING DIAGRAM
27HMG
G
1
27H = Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NUP1105LT1G
Package
SOT23
(PbFree)
Shipping
3,000 /
Tape & Reel
SZNUP1105LT1G
SOT23
(PbFree)
3,000 /
Tape & Reel
NUP1105LT3G
SOT23
(PbFree)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2017 Rev. 7
1
Publication Order Number:
NUP1105L/D

SZNUP1105LT1G
NUP1105LT1G, SZNUP1105LT1G
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
8 x 20 ms Double Exponential Waveform (Note 1)
W
350
TJ
TJ
TL
ESD
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body model (HBM)
Machine Model (MM)
IEC 6100042 Specification (Contact)
55 to 150
55 to 150
260
16
400
30
°C
°C
°C
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non-repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
VRWM Reverse Working Voltage
(Note 2)
24 V
VBR Breakdown Voltage
IT = 1 mA (Note 3)
25.7 28.4 V
IR Reverse Leakage Current
VRWM = 24 V
15 100 nA
VC Clamping Voltage
IPP = 5 A (8 x 20 ms Waveform) (Note 4)
40 V
VC Clamping Voltage
IPP = 8 A (8 x 20 ms Waveform) (Note 4)
44 V
IPP Maximum Peak Pulse Current
8 x 20 ms Waveform (Note 4)
8.0 A
CJ Capacitance
VR = 0 V, f = 1 MHz (Anode to GND)
VR = 0 V, f = 1 MHz (Anode to Anode)
60 pF
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.
5. Include SZ-prefix devices where applicable.
www.onsemi.com
2


Features NUP1105LT1G, SZNUP1105LT1G ESD Protecti on Diode Single Line CAN/LIN Bus Protec tor The NUP1105L has been designed to p rotect LIN and single line CAN transcei vers from ESD and other harmful transie nt voltage events. This device provides bidirectional protection for the data line with a single SOT−23 package, gi ving the system designer a low cost opt ion for improving system reliability an d meeting stringent EMI requirements. www.onsemi.com SOT−23 BIDIRECTIONAL V OLTAGE SUPPRESSOR 350 W PEAK POWER Fea tures • SOT−23 Package Allows One S eparate Bidirectional Configuration • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) • Low Reverse Leakage Current (< 100 nA) • IEC Comp atibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 4 0 A – 5/50 ns − IEC 61000−4−5 ( Lighting) 8.0 A (8/20 ms) • ISO 7637 1, Nonrepetitive EMI Surge Pulse TBD • ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses • Flammability Rating UL 94 V−0 • SZ Prefix for Automotive and.
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