NCV51511 Gate Driver Datasheet

NCV51511 Datasheet, PDF, Equivalent


Part Number

NCV51511

Description

High Side and Low Side Gate Driver

Manufacture

ON Semiconductor

Total Page 14 Pages
Datasheet
Download NCV51511 Datasheet


NCV51511
NCV51511
High-Frequency, High Side
and Low Side Gate Driver
The NCV51511 is high side and low side gatedrive IC designed for
highvoltage, highspeed, driving MOSFETs operating up to 80 V.
The NCV51511 integrates a driver IC and a bootstrap diode. The
driver IC features low delay time and matched PWM input
propagation delays, which further enhance the performance of the
part.
The high speed dual gate drivers are designed to drive both the
highside and lowside of NChannel MOSFETs in a half bridge or
synchronous buck configuration. The floating highside driver is
capable of operating with supply voltages of up to 80 V. In the dual
gate driver, the high side and low side each have independent inputs to
allow maximum flexibility of input control signals in the application.
The PWM input signal (high level) can be 3.3 V, 5 V or up to VDD
logic input to cover all possible applications. The bootstrap diode for
the highside driver bias supply is integrated in the chip. The
highside driver is referenced to the switch node (HS) which is
typically the source pin of the highside MOSFET and drain pin of the
lowside MOSFET. The lowside driver is referenced to VSS which is
typically ground. The functions contained are the input stages, UVLO
protection, level shift, bootstrap diode, and output driver stages.
Features
Drives two NChannel MOSFETs in High & Low Side
Integrated Bootstrap Diode for High Side Gate Drive
Bootstrap Supply Voltage Range up to 100 V
3 A Source, 6 A Sink Output Current Capability
Drives 1nF Load with Typical Rise/Fall Times of 6 ns/4 ns
TTL Compatible Input Thresholds
Wide Supply Voltage Range 8 V to 16 V (Absolute Maximum 18 V)
Fast Propagation Delay Times (Typ. 30 ns)
2 ns Delay Matching (Typical)
UnderVoltage Lockout (UVLO) Protection for Drive Voltage
IndustryStandard Pinouts, SOIC 8 with Exposed PAD
Automotive Qualified to AECQ100:
Operating temperature range from 40°C to 150°C
Reliability at 150°C for 2,016 hrs
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
48 V Converters for HEV/EV
HalfBridge and FullBridge Converters
SynchronousBuck Converters
www.onsemi.com
8
1
SOIC8EP
CASE 751AC
MARKING DIAGRAM
8
V51511
ALYWG
G
1
V51511 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
April, 2018 Rev. 0
1
Publication Order Number:
NCV51511/D

NCV51511
VDC
NCV51511
TYPICAL APPLICATIONS
Supply Voltage
CIN
CHB
1 VDD
2 HB
3 HO
4 HS
LO 8
VSS 7
LI 6
HI 5
RLGATE
L
PWM
Controller
COUT
L
O
A
D
FEEDBACK
Figure 1. Application Schematic Synchronous Buck Converter
VDC
PWM
Controller
5 HI
6 LI
7 VSS
8 LO
RHGATE
HS 4
HO 3
HB 2
CHB
VDD 1
CIN
RLGATE
SECONDARY
SIDE
CIRCUIT
ISOLATION
AND
FEEDBACK
Figure 2. Application Schematic Half Bridge Converter
www.onsemi.com
2


Features NCV51511 High-Frequency, High Side and Low Side Gate Driver The NCV51511 is hi gh side and low side gate−drive IC de signed for high−voltage, high−speed , driving MOSFETs operating up to 80 V. The NCV51511 integrates a driver IC an d a bootstrap diode. The driver IC feat ures low delay time and matched PWM inp ut propagation delays, which further en hance the performance of the part. The high speed dual gate drivers are design ed to drive both the high−side and lo w−side of N−Channel MOSFETs in a ha lf bridge or synchronous buck configura tion. The floating high−side driver i s capable of operating with supply volt ages of up to 80 V. In the dual gate dr iver, the high side and low side each h ave independent inputs to allow maximum flexibility of input control signals i n the application. The PWM input signal (high level) can be 3.3 V, 5 V or up t o VDD logic input to cover all possible applications. The bootstrap diode for the high−side driver bias supply is integrated in the chip. The high−side dri.
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