NVH025N65S3 N-Channel MOSFET Datasheet

NVH025N65S3 Datasheet, PDF, Equivalent


Part Number

NVH025N65S3

Description

Automotive N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download NVH025N65S3 Datasheet


NVH025N65S3
NVH025N65S3
Automotive N-Channel
SUPERFET) III Easy-drive
MOSFET
650 V, 75 A, 25 mW
Description
SuperFET III MOSFET is On semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss provide superior switching performance, and with
stand extreme dv/dt rate. Consequently, SuperFET III MOSFET
Easydrive series helps manage EMI issues and allows for easier
design implementation.
Features
AECQ101 Qualified
Max Junction Temperature 150°C
Typ. RDS(on) = 19.9 mΩ
Ultra Low Gate Charge (Typ. QG = 236 nC)
Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)
100% Avalanche Tested
Typical Applications
Automotive PHEVBEV DCDC Converter
Automotive Onboard Charger for PHEVBEV
www.onsemi.com
BVDSS
650 V
RDS(on) MAX
25 mΩ @ 10 V
ID MAX
75 A
D
G
S
N-Channel MOSFET
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
NVH
025N65S3
© Semiconductor Components Industries, LLC, 2017
April, 2018 Rev. 2
$Y
&Z
&3
&K
NVH025N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
NVH025N65S3/D

NVH025N65S3
NVH025N65S3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC Positive
AC Positive, (f > 1 Hz)
650 V
30 V
30 V
AC Negative, (f > 1 Hz)
20 V
ID Drain Current
Continuous (Tc = 25°C)
Continuous (Tc = 100°C)
75 A
65.8 A
IDM
EAS
IAS
EAR
dv/dt
Pulsed Drain Current
Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche (Note 1)
MOSFET dv/dt
300
2025
15
5.95
100
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20 V/ns
PD Power Dissipation
(Tc = 25°C)
Derate Above 25°C
595 W
4.76 W/°C
TJ,TSTG
Operating and Storage Temperature Range
55 to +150
°C
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD < 75 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJ C
RθJ A
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Value
0.21
40
Unit
°C/W
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
NVH025N65S3
NVH025N65S3
TO247 G03
Packing Method
Tube
Shipping (Qty / Packing)
30 Units / Tube
www.onsemi.com
2


Features NVH025N65S3 Automotive N-Channel SUPERFE T) III Easy-drive MOSFET 650 V, 75 A, 2 5 mW Description SuperFET III MOSFET is On semiconductor’s brand−new high voltage super−junction (SJ) MOSFET fa mily that is utilizing charge balance t echnology for outstanding low on−resi stance and lower gate charge performanc e. This advanced technology is tailored to minimize conduction loss provide su perior switching performance, and with stand extreme dv/dt rate. Consequent ly, SuperFET III MOSFET Easy−drive se ries helps manage EMI issues and allows for easier design implementation. Feat ures • AEC−Q101 Qualified • Max J unction Temperature 150°C • Typ. RDS (on) = 19.9 mΩ • Ultra Low Gate Char ge (Typ. QG = 236 nC) • Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF) • 100% Avalanche Tested Typi cal Applications • Automotive PHEV− BEV DC−DC Converter • Automotive On board Charger for PHEV−BEV www.onsem i.com BVDSS 650 V RDS(on) MAX 25 mΩ @ 10 V ID MAX 75 A D G S N-Channel MOSFET TO−247−3LD CASE 3.
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