FDB3632

MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) These Devices are Pb−Free and are RoHS Compliant Applications Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter www.onsemi.com VDSS 100 V RDS(ON) MAX 9 mW D ID MAX 80 A G S TO−247−3 CASE 340CK G D S GDS TO−220−3 CASE 340AT D2PAK−3 CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FDX3632 © Semiconductor Components Industries, LLC, 2017 May, 2020 − Rev. 5 $Y &Z &3 &K FDX3632 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code X = H/P/B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FDP3632/D FDH3632, FDP3632, FDB3632 MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (TC < 111°C, VGS = 10 V) − Continuous (Tamb = 25°C, VGS = 10 V, RqJA = 43°C/W) 100 V ±20 V 80 A 12 ID Drain Current − Pulsed EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation (TC = 25°C) − Derate Above 25°C Figure 4 337 310 2.07 A mJ W W/°C TJ, TSTG Operating and Storage Te...