NHP620MFD Power Rectifier Datasheet

NHP620MFD Datasheet, PDF, Equivalent


Part Number

NHP620MFD

Description

Power Rectifier

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download NHP620MFD Datasheet


NHP620MFD
NHP620MFD,
NRVHP620MFD
Switch-Mode
Power Rectifier
This ultrafast rectifier in the dual flag SO−8 flat lead package offers
designers a unique degree of versatility and design freedom. The two
devices are electrically independent and can be used separately, as
common cathode, as common anode or in series as a function of board
level layout. The exposed pad design provides low thermal resistance.
The clip attach design creates a package with very efficient die size to
board area ratio. While thermal performance is nearly the same as the
DPAK package height and board footprint are less than half.
Features
New Package Provides Capability of Inspection and Probe After
Board Mounting
Low Forward Voltage Drop
175°C Operating Junction Temperature
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
Output Rectification in Switching Power Supplies
Freewheeling Diode used with Inductive Loads
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ULTRAFAST RECTIFIER
6 AMPERES (3x2), 200 VOLTS
1 7,8
3 5,6
1
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
C1 C1
A1
NC HP620D
A2 AYWZZ
NC
C2 C2
C1
C1
C2
C2
HP620D = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NHP620MFDT1G
Package
DFN8
(Pb−Free)
Shipping
1500 /
Tape & Reel
NHP620MFDT3G
NRVHP620MFDT1G
DFN8
(Pb−Free)
DFN8
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NRVHP620MFDT3G
DFN8
5000 /
(Pb−Free) Tape & Reel
NRVHP620MFDWT3G DFN8
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NHP620MFD/D

NHP620MFD
NHP620MFD, NRVHP620MFD
MAXIMUM RATINGS (per diode unless noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 167°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 165°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
V
200
3.0 A
6.0 A
80 A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg
TJ
EAS
−65 to +175
−55 to +175
10
3B
°C
°C
mJ
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (per diode unless noted)
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
3.4 °C/W
ELECTRICAL CHARACTERISTICS (per diode unless noted)
Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TJ = 125°C)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 6.0 Amps, TJ = 125°C)
(iF = 6.0 Amps, TJ = 25°C)
vF V
0.76 0.85
0.935
1.0
0.86 0.91
1.02 1.090
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR mA
6.00 35
0.012
0.5
Reverse Recovery Time
IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C
trr 18 25 ns
Reverse Recovery Time
IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 50°C
trr 40 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2


Features NHP620MFD, NRVHP620MFD Switch-Mode Powe r Rectifier This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of ve rsatility and design freedom. The two d evices are electrically independent and can be used separately, as common cath ode, as common anode or in series as a function of board level layout. The exp osed pad design provides low thermal re sistance. The clip attach design create s a package with very efficient die siz e to board area ratio. While thermal pe rformance is nearly the same as the DPA K package height and board footprint ar e less than half. Features • New Pack age Provides Capability of Inspection a nd Probe After Board Mounting • Low F orward Voltage Drop • 175°C Operatin g Junction Temperature • NRV Prefix f or Automotive and Other Applications Re quiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free an d Halide−Free Devices Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy .
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