MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
Dual General Purpose Transistors
The MBT3904DW1 and MBT3904DW2 devi...
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
Dual General Purpose
Transistors
The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.
Features
hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge
VCEO VCBO VEBO
IC ESD
40 Vdc 60 Vdc 6.0 Vdc 200 mAdc HBM Class 2 MM Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1) TA = 25°C
Thermal Resistance, Junction−to−Ambient
PD RqJA
150 mW 833 °C/W
Jun...