RFD16N05LSM

RFD16N05LSM Product Preview MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 mW These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V) driving sources in applications such as programmable controllers, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 V to 5 V range, thereby facilitating true on−off power control directly from logic circuit supply voltages. Formerly developmental type TA09871. Features 16 A, 50 V rDS(ON) = 0.047 W UIS SOA Rating Curve (Single Pulse) Design Optimized for 5 V Gate Drives Can be Driven Directly from CMOS, NMOS, TTL Circuits SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature ♦ TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” www.onsemi.com D G S D G S DPAK TO−252 CASE 369AS MARKING DIAGRAM $Y&Z&3&K RFD16N 05LSM &Y &Z &3 &K RFD16N05LSM = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION Part Number ...