TS5A3160 Analog Switch Datasheet

TS5A3160 Datasheet, PDF, Equivalent


Part Number

TS5A3160

Description

SPDT Analog Switch

Manufacture

etcTI

Total Page 30 Pages
Datasheet
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TS5A3160
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TS5A3160
SCDS216E – OCTOBER 2005 – REVISED NOVEMBER 2017
TS5A3160 1-SPDT Analog Switch
1 Features
1 Low ON-State Resistance (1 )
• Isolation in the Powered-Off Mode, V+ = 0
• Specified Make-Before-Break Switching
• Control Inputs are 5-V Tolerant
• Low Charge Injection
• Excellent ON-Resistance Matching
• Low Total Harmonic Distortion
• 1.65-V to 5.5-V Single-Supply Operation
• Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
3 Description
The TS5A3160 device is a single-pole double-throw
(SPDT) analog switch that is designed to operate
from 1.65 V to 5.5 V. The device offers a low ON-
state resistance and an excellent channel-to-channel
ON-state resistance matching. The device has
excellent total harmonic distortion (THD) performance
and consumes very low power. These features make
this device suitable for portable audio applications.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TS5A3160DBV
SOT-23 (6)
2.90 mm × 1.60 mm
TS5A3160DCK
SC70 (6)
2.00 mm × 1.25 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
• Mobile Phones
• Consumer and Computing
• Portable Instrumentation
Block Diagram
IN
COM
NC
NO
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

TS5A3160
TS5A3160
SCDS216E – OCTOBER 2005 – REVISED NOVEMBER 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 4
6.5 Electrical Characteristics for 5-V Supply................... 5
6.6 Electrical Characteristics for 3.3-V Supply................ 7
6.7 Electrical Characteristics for 2.5-V Supply................ 9
6.8 Electrical Characteristics for 1.8-V Supply.............. 11
6.9 Typical Characteristics ............................................ 13
7 Parameter Measurement Information ................ 15
8 Detailed Description ............................................ 18
8.1 Overview ................................................................. 18
8.2 Functional Block Diagram ....................................... 18
8.3 Feature Description................................................. 18
8.4 Device Functional Modes........................................ 18
9 Application and Implementation ........................ 19
9.1 Application Information............................................ 19
9.2 Typical Application ................................................. 19
10 Power Supply Recommendations ..................... 20
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Example .................................................... 20
12 Device and Documentation Support ................. 21
12.1 Device Support .................................................... 21
12.2 Documentation Support ....................................... 22
12.3 Community Resources.......................................... 22
12.4 Trademarks ........................................................... 22
12.5 Electrostatic Discharge Caution ............................ 22
12.6 Glossary ................................................................ 22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
Changes from Revision D (June 2015) to Revision E
Page
• Changed Input leakage current UNIT value From: μA To: nA in the Electrical Characteristics for 5-V Supply table ............ 5
Changes from Revision C (March 2012) to Revision D
Page
• Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
2 Submit Documentation Feedback
Product Folder Links: TS5A3160
Copyright © 2005–2017, Texas Instruments Incorporated


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity Reference Design TS5A3160 SCDS 216E – OCTOBER 2005 – REVISED NOVEM BER 2017 TS5A3160 1-Ω SPDT Analog Swi tch 1 Features •1 Low ON-State Resis tance (1 Ω) • Isolation in the Powe red-Off Mode, V+ = 0 • Specified Make -Before-Break Switching • Control Inp uts are 5-V Tolerant • Low Charge Inj ection • Excellent ON-Resistance Matc hing • Low Total Harmonic Distortion • 1.65-V to 5.5-V Single-Supply Opera tion • Latch-Up Performance Exceeds 1 00 mA Per JESD 78, Class II • ESD Per formance Tested Per JESD 22 – 2000-V Human Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) 3 Description The TS5A3160 device is a si ngle-pole double-throw (SPDT) analog sw itch that is designed to operate from 1 .65 V to 5.5 V. The device offers a low ONstate resistance and an excellent ch annel-to-channel ON-state resistance ma tching. The device has excellent total harmonic distortion (THD) performance and consumes very .
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