TS5N412

www.ti.com FEATURES Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Ω Typ) 0- to 10-V Switching on Data I/O Ports Bidirectional Data Flow With Near-Zero Propagation Delay Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port) VCC Operating Range From 4.75 V to 5.25 V Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) Supports Both Digital and Analog Applications TS5N412 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH SCDS207 – AUGUST 2005 APPLICATIONS PCI Interface Differential Signal Interface Memory Interleaving Bus Isolation Low-Distortion Signal Gating DBQ OR PW PACKAGE (TOP VIEW) S 1B1 1B2 1A 2B1 2B2 2A GND 1 2 3 4 5 6 7 8 16 VCC 15 OE 14 4B1 13 4B2 12 4A 11 3B1 10 3B2 9 3A DESCRIPTION/ORDERING INFORMATION The TS5N412 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N412 pro...