Document
NXP Semiconductors Technical Data
Document Number: MC33660 Rev 6.0, 7/2016
ISO K line serial link interface
The 33660 is a serial link bus interface device designed to provide bi-directional half-duplex communication interfacing in automotive diagnostic applications. It is designed to interface between the vehicle’s on-board microcontroller, and systems off-board the vehicle via the special ISO K line. The 33660 is designed to meet the Diagnostic Systems ISO9141 specification. The device’s K line bus driver’s output is fully protected against bus shorts and over-temperature conditions.
The 33660 derives its robustness to temperature and voltage extremes by being built on a SMARTMOS process, incorporating CMOS logic, bipolar/MOS analog circuitry, and DMOS power FETs. Although the 33660 was principally designed for automotive applications, it is suited for other serial communication applications. It is parametrically specified over an ambient temperature range of -40 ºC ≤ TA ≤ 125 ºC and 8.0 V ≤ VBB ≤ 18 V supply. The economical SO-8 surface-mount plastic package makes the 33660 very cost effective.
Features
• Operates over a wide supply voltage of 8.0 V to 18 V • Operating temperature of -40 °C to 125 °C • Interfaces directly to standard CMOS microprocessors • ISO K line pin protected against shorts to battery • Thermal shutdown with hysteresis • ISO K line pin capable of high currents • ISO K line can be driven with up to 10 nF of parasitic capacitance • 8.0 kV ESD protection attainable with few additional components • Standby mode: no VBAT current drain with VDD at 5.0 V • Low current drain during operation with VDD at 5.0 V
33660
ISO9141 PHYSICAL INTERFACE
EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN
Applications • Farm equipment • Automotive systems • Industrial equipment • Robotic equipment • Applications where module-to-module communications are required • Marine and aircraft networks
+VBAT
VDD
VDD
33660
VDD
VBB
MCU Dx
SCIRxD SCITxD
CEN RX TX
ISO GND
ISO K-LINE
Figure 1. 33660 simplified application diagram
TXD RXD
© 2016 NXP B.V.
1 Orderable parts
Table 1. Orderable part variations
Part number (1)
Temperature (TA)
Package
Parameter
MC33660EF
-40 °C to 125 °C
8-SOICN
VBB Load Dump Peak Voltage (in accordance with ISO 7637-2 & ISO 7637-3)
MC33660BEF
Module Level ESD (Air Discharge, Powered)
Notes 1. To order parts in tape & reel, add the R2 suffix to the part number. 2. Recommended for all new designs
Symbol VBB(5a) VBB(5b)
VESD4
Condition
33660 33660B (2)
Pulse 5a 470 ohm series resistor and 100 nF capacitor to GND on VBB
Pulse 5b 470 ohm series resistor and 100 nF capacitor to GND on VBB
– 45 V
82 V 45 V
33 V zener diode and 470 pF capacitor to GND on ISO
– ±25000 V
33660
2
NXP Semiconductors
2 Internal block diagram
VBB 60 V
CEN 10 V
3.0 kΩ 600 kΩ
* Only applies to 33660B
20 V
125 kΩ
RHYS
55 kΩ
550 kΩ
Master Bias
110 kΩ
VDD
10 V
TX 10 V
125 kΩ
Thermal Shutdown
55 V 2.0 kΩ
10 V 45 V
RX ISO
GND
Figure 2. 33660 simplified internal block diagram
NXP Semiconductors
33660
3
3 Pin connections
3.1 Pinout diagram
3.2 Pin definitions
VBB NC
GND ISO
11 22 33 44
88 CEN 77 VDD 66 RX 55 TX
Figure 3. 33660 pin connections
Table 2. 33660 pin definitions
Pin Number 1 2
Pin Name VBB NC
Definition Battery power through external resistor and diode. Not to be connected. (3)
3
GND
Common signal and power return.
4 ISO Bus connection.
5 TX Logic level input for data to be transmitted on the bus.
6 RX Logic output of data received on the bus.
7
VDD
Logic power source input.
8
CEN
Chip enable. Logic “1” for active state. Logic “0” for sleep state.
Notes 3. NC pins should not have any connections made to them. NC pins are not guaranteed to be open circuits.
33660
4
NXP Semiconductors
4 Electrical characteristics
4.1 Maximum ratings
Table 3. Maximum ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device.
Symbol
Rating
Value
Unit Notes
VDD
VBB(5a) VBB(5b)
VISO VESD1 VESD2
VESD3-1 VESD3-2 VESD4
VDD DC Supply Voltage
VBB Load Dump Peak Voltage (in accordance with ISO 7637-2 & ISO 7637-3)
• Pulse 5a - 33660B only • Pulse 5b
ISO Pin Load Dump Peak Voltage
ESD Voltage • Human Body Model • Machine Model 33660 33660B • Charge Device Model Corner Pins All other Pins • Module Level ESD (Air Discharge, Powered) 33660B only ISO pin with 33 V zener diode and 470 pF capacitor to GND -
-0.3 to 7.0
82 45 40
±2000 ±150 ±200 ±750 ±500
±25000
V
V V (4)
(5) (6) (6)
V (6)
(7)
ECLAMP
ISO Clamp Energy
10 mJ (8)
TSTG
Storage Temperature
-55 to +150
°C
TC Operating Case Temperature
-40 to +125
°C
TJ Operating Junction Temperature
-40 to +150
°C
PD TPPRT
Power Dissipation TA = 25 °C Peak Package Reflow Temperature During Reflow
100 Note 10.
mW °C
(9).