POWER MOSFET. STWA50N65DM2AG Datasheet


STWA50N65DM2AG MOSFET. Datasheet pdf. Equivalent


Part Number

STWA50N65DM2AG

Description

N-CHANNEL POWER MOSFET

Manufacture

STMicroelectronics

Total Page 12 Pages
Datasheet
Download STWA50N65DM2AG Datasheet


STWA50N65DM2AG
STWA50N65DM2AG
Automotive-grade N-channel 650 V, 0.070 Ω typ., 38 A
Power MOSFET MDmesh™ DM2 in TO-247 long leads package
Datasheet - production data
Features
Order code
STWA50N65DM2AG
VDS
650 V
RDS(on)
max.
0.087 Ω
ID
38 A
PTOT
300 W
Figure 1: Internal schematic diagram
D(2)
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
G(1)
S(3)
Order code
STWA50N65DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
AM01476v1_No_tab
Table 1: Device summary
Marking
Package
Packing
50N65DM2
TO-247 long leads
Tube
The HTRB test was performed at 80% V(BR)DSS in compliance with AEC-Q101 rev. C. All the
other tests were performed according to rev. D.
December 2017
DocID030213 Rev 2
This is information on a product in full production.
1/12
www.st.com

STWA50N65DM2AG
Contents
STWA50N65DM2AG
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-247 long leads package information ........................................... 9
5 Revision history ............................................................................ 11
2/12 DocID030213 Rev 2


Features STWA50N65DM2AG Automotive-grade N-chann el 650 V, 0.070 Ω typ., 38 A Power MOS FET MDmesh™ DM2 in TO-247 long leads package Datasheet - production data Fe atures Order code STWA50N65DM2AG VDS 6 50 V RDS(on) max. 0.087 Ω ID 38 A P TOT 300 W Figure 1: Internal schematic diagram D(2)  AEC-Q101 qualified Fast-recovery body diode  Extreme ly low gate charge and input capacitanc e  Low on-resistance  100% avalan che tested  Extremely high dv/dt rug gedness  Zener-protected Application s  Switching applications G(1) S(3) Order code STWA50N65DM2AG Description This high voltage N-channel Power MOSF ET is part of the MDmesh™ DM2 fast re covery diode series. It offers very low recovery charge (Qrr) and time (trr) c ombined with low RDS(on), rendering it suitable for the most demanding high ef ficiency converters and ideal for bridg e topologies and ZVS phase-shift conver ters. AM01476v1_No_tab Table 1: Devic e summary Marking Package Packing 50N65DM2 TO-247 long leads Tube The HTRB test.
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