SCT50N120 Power MOSFET Datasheet

SCT50N120 Datasheet, PDF, Equivalent


Part Number

SCT50N120

Description

Silicon carbide Power MOSFET

Manufacture

STMicroelectronics

Total Page 11 Pages
Datasheet
Download SCT50N120 Datasheet


SCT50N120
SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A,
59 mΩ (typ., TJ=150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs.
temperature
Very high operating junction temperature
capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Applications
Figure 1: Internal schematic diagram
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supplies
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material allows
designers to use an industry-standard outline
with significantly improved thermal capability.
These features render the device perfectly
suitable for high-efficiency and high power
density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT50N120
SCT50N120
HiP247™
Tube
April 2017
DocID027989 Rev 4
This is information on a product in full production.
1/11
www.st.com

SCT50N120
Contents
Contents
SCT50N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 5
3 Package information ....................................................................... 8
3.1 HiP247™ package information.......................................................... 8
4 Revision history ............................................................................ 10
2/11 DocID027989 Rev 4


Features SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C ) in an HiP247™ package Datasheet - p roduction data Features  Very tight variation of on-resistance vs. tempera ture  Very high operating junction t emperature capability (TJ = 200 °C) Very fast and robust intrinsic body d iode  Low capacitance Applications Figure 1: Internal schematic diagram  Solar inverters, UPS  Motor driv es  High voltage DC-DC converters Switch mode power supplies D(2, TAB) G(1) S(3) AM01475v1_noZen Descript ion This silicon carbide Power MOSFET i s produced exploiting the advanced, inn ovative properties of wide bandgap mate rials. This results in unsurpassed on-r esistance per unit area and very good s witching performance almost independent of temperature. The outstanding therma l properties of the SiC material allows designers to use an industry-standard outline with significantly improved the rmal capability. These features render the device perfectly suitable for high-efficie.
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