Power MOSFET. SCTW100N65G2AG Datasheet


SCTW100N65G2AG MOSFET. Datasheet pdf. Equivalent


Part Number

SCTW100N65G2AG

Description

silicon carbide Power MOSFET

Manufacture

STMicroelectronics

Total Page 11 Pages
Datasheet
Download SCTW100N65G2AG Datasheet


SCTW100N65G2AG
SCTW100N65G2AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,
20 mΩ (typ., TJ=25 °C), in an HiP247™ package
Features
Order code
SCTW100N65G2AG
VDS
650 V
RDS(on)typ.
20 mΩ
ID
100 A
3
2
1
HiP247™
D(2, TAB)
G(1)
• AEC-Q101 qualified
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Traction for inverters
• DC-DC converters
• OBC
S(3) Description
AM01475v1_noZen
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance.
Maturity status link
SCTW100N65G2AG
Device summary
Order code SCTW100N65G2AG
Marking
SCT100N65G2AG
Package
HiP247™
Packing
Tube
DS11643 - Rev 2 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

SCTW100N65G2AG
SCTW100N65G2AG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
Gate-source voltage
VGS
Gate-source voltage (recommended operational values)
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
650
-10 to 22
-5 to 18
100
70
280
420
-55 to 200
Unit
V
A
A
W
°C
°C
Value
0.42
50
Unit
°C/W
°C/W
DS11643 - Rev 2
page 2/11


Features SCTW100N65G2AG Datasheet Automotive-grad e silicon carbide Power MOSFET 650 V, 1 00 A, 20 mΩ (typ., TJ=25 °C), in an HiP247™ package Features Order code SCTW100N65G2AG VDS 650 V RDS(on)typ. 20 mΩ ID 100 A 3 2 1 HiP247™ D(2, TAB) G(1) • AEC-Q101 qualified • V ery high operating temperature capabili ty (TJ = 200 °C) • Very fast and rob ust intrinsic body diode • Low capaci tance Applications • Traction for inv erters • DC-DC converters • OBC S( 3) Description AM01475v1_noZen This sil icon carbide Power MOSFET device has be en developed using ST’s advanced and innovative 2nd generation SiC MOSFET te chnology. The device features remarkabl y low on-resistance per unit area and v ery good switching performance. Maturi ty status link SCTW100N65G2AG Device s ummary Order code SCTW100N65G2AG Mark ing SCT100N65G2AG Package HiP247™ Packing Tube DS11643 - Rev 2 - Novem ber 2018 For further information contac t your local STMicroelectronics sales office. www.st.com SCTW100N65G2AG Electrical ratin.
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